Skip to Main Content
 

Global Search Box

 
 
 
 

ETD Abstract Container

Abstract Header

Investigation of optoelectronic properties of thin film n-type ZnS on p-type Si

Gurusinghe, Nilanka Praveena

Abstract Details

2008, Master of Science (MS), Bowling Green State University, Physics.
This project investigated optoelectronic properties of thin film n-type ZnS on p-type Si substrate, which have been fabricated using pulsed-laser deposition (PLD) technique. The photocurrent (PC) response of the above heterostructure was measured using the lock-in technique. The experimental PC response spectrum was compared with the theoretical spectrum using density of states (DOS), modified Urbach rule,and the surface recombination of a thin film. In addition, current-voltage (I/V) characteristics was employed to determine the electronic features of the thin-film sample.
Dr. Bruno Ullrich, PhD (Advisor)
Dr. Lewis Fulcher, PhD (Committee Member)
Dr. Mikhail Zamkov, PhD (Committee Member)
51 p.

Recommended Citations

Citations

  • Gurusinghe, N. P. (2008). Investigation of optoelectronic properties of thin film n-type ZnS on p-type Si [Master's thesis, Bowling Green State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1213378237

    APA Style (7th edition)

  • Gurusinghe, Nilanka. Investigation of optoelectronic properties of thin film n-type ZnS on p-type Si. 2008. Bowling Green State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1213378237.

    MLA Style (8th edition)

  • Gurusinghe, Nilanka. "Investigation of optoelectronic properties of thin film n-type ZnS on p-type Si." Master's thesis, Bowling Green State University, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1213378237

    Chicago Manual of Style (17th edition)