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case1057001628.pdf (3.75 MB)
ETD Abstract Container
Abstract Header
Proton irradiation damage in zinc and cadmium doped indium phosphide
Author Info
Rybicki, George Charles
Permalink:
http://rave.ohiolink.edu/etdc/view?acc_num=case1057001628
Abstract Details
Year and Degree
1993, Doctor of Philosophy, Case Western Reserve University, Materials Science and Engineering.
Abstract
In an attempt to better understand the superior radiation resistance of InP solar cells, 2 MeV proton irradiation damage was studied in Zn and Cd doped InP Schottky diodes. The damage was analyzed using the capacitance/voltage technique to study carrier loss, and using DLTS to study the irradiation induced deep levels. The carrier removal rate was found to be identical in both Zn and Cd doped InP. The DLTS spectrum of Cd doped InP was studied in detail for the first time: it was identical to the spectrum of comparably Zn doped InP. Two irradiation induced deep levels dominated the DLTS spectra in Cd and Zn doped InP, H3 at E v + 0.28 eV and H5 at E v + 0.57 eV. The defect H4 at E v + 0.37 eV was not observed in the heavily Zn or Cd doped samples, but was observed in lightly Zn doped samples. This effect is related to the dependence of the annealing rate of H4 on dopant concentration and type. The introduction rate of H3 was identical in both materials, but the introduction rate of H5 was lower in Cd doped InP. This effect is attributed to the slower diffusion rate of Cd and its effect on the formation of H5, a defect-dopant complex. The annealing rates of the defects were higher in Cd doped InP than in Zn do ped InP. A model is suggested in which the defects H3 and H4 are eliminated at a dopant interstitial created during irradiation. The slower diffusion of Cd leads to slower elimination of the interstitial at sinks. The higher interstitial concentration results in an increased defect annealing rate. The slower diffusion rate of Cd inhibits the formation of H5, but its concentration grows rapidly on annealing. After annealing the concentration of H5 was nearly the same in comparably Zn and Cd doped InP. The enhanced annealing rates of H3 and H4, and the reduced formation rate of H5 make Cd doped InP more radiation resistant than Zn doped InP.
Committee
Wendell Williams (Advisor)
Pages
157 p.
Keywords
Proton irradiation damage
;
zinc
;
cadmium
;
indium phosphide
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Refworks
EndNote
RIS
Mendeley
Citations
Rybicki, G. C. (1993).
Proton irradiation damage in zinc and cadmium doped indium phosphide
[Doctoral dissertation, Case Western Reserve University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=case1057001628
APA Style (7th edition)
Rybicki, George.
Proton irradiation damage in zinc and cadmium doped indium phosphide.
1993. Case Western Reserve University, Doctoral dissertation.
OhioLINK Electronic Theses and Dissertations Center
, http://rave.ohiolink.edu/etdc/view?acc_num=case1057001628.
MLA Style (8th edition)
Rybicki, George. "Proton irradiation damage in zinc and cadmium doped indium phosphide." Doctoral dissertation, Case Western Reserve University, 1993. http://rave.ohiolink.edu/etdc/view?acc_num=case1057001628
Chicago Manual of Style (17th edition)
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Document number:
case1057001628
Download Count:
443
Copyright Info
© 1993, all rights reserved.
This open access ETD is published by Case Western Reserve University School of Graduate Studies and OhioLINK.