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PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS

Shelberg, Daniel Thomas

Abstract Details

2010, Master of Sciences (Engineering), Case Western Reserve University, Chemical Engineering.
Silicon carbide is known for its hardness, chemical resistance, andmoisture barrier properties. This study demonstrates the effectiveness of silicon carbide films deposited at ambient temperatures. Nanometer scale films showed excellent moisture resistance due to a small diffusion coefficient. They demonstrated high hardness which indicates favorable wear resistance. Chemical resistance was found to be particularly good at room temperature, and higher temperature tests revealed the possibility of engineering better films. The films have been shown to be extremely flexible, smooth, and pinhole free. Therefore, nanometer scale silicon carbide films have exceptionally good properties for use as a protective coating in electronic devices.
Chung-Chiun Liu, PhD (Advisor)
Mohan Sankaran, PhD (Committee Member)
Heidi Martin, PhD (Committee Member)
60 p.

Recommended Citations

Citations

  • Shelberg, D. T. (2010). PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS [Master's thesis, Case Western Reserve University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=case1269963941

    APA Style (7th edition)

  • Shelberg, Daniel. PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS. 2010. Case Western Reserve University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=case1269963941.

    MLA Style (8th edition)

  • Shelberg, Daniel. "PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS." Master's thesis, Case Western Reserve University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=case1269963941

    Chicago Manual of Style (17th edition)