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Master Thesis-Lu-Yu-4-1-14.pdf (1.36 MB)

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Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization

Yu, Lu
http://rave.ohiolink.edu/etdc/view?acc_num=case1396521217

Abstract Details

2014, Master of Sciences (Engineering), Case Western Reserve University, Chemical Engineering.
Copper interconnects in microchips are currently formed by Cu electrodeposition. With the trend of future device miniaturization, the copper interconnect dimensions will shrink, requiring a drastic change in the current state-of-the-art interconnect metallization process. The major technology hurdles include: i) non-uniformity of Cu seed layer deposited by physical vapor deposition (PVD) on the barrier and ii) deteriorated electromigration resistance of Cu interconnects. A technology under development relies on vapor deposition of a uniform ruthenium (Ru) layer on the barrier, followed by electroless deposition of a thin and continuous Cu seed layer on Ru. In this thesis, we report an electroless bath that enables deposition of copper-manganese (Cu-Mn) alloy film. Incorporating Mn with Cu is attractive due to ability of Mn to improve Cu's electromigration resistance. Results show the Mn incorporated is mobile, a requisite for its application in interconnect metallization. Electrochemical and Quartz Crystal Microbalance (QCM) measurements indicate that the mechanism of Mn incorporation during electroless Cu deposition is most likely the underpotential deposition of Mn on Cu. In addition, a novel electroless Cu bath that enables high Cu nucleation density on the Ru surface is developed. The bath enables deposition of sub-10 nm thin Cu film on Ru. A special additive, ethylenediamine is identified that can significantly improve electroless Cu nucleation on Ru. The mechanism by which ethylenediamine improves nucleation is linked to the inhibition of autocatalytic plating on already formed nuclei, thereby providing driving force for generation of new nuclei which yield high nucleation density thin Cu films.
Rohan Akolkar (Committee Chair)
Uziel Landau (Committee Member)
Chung Chiun Liu (Committee Member)
62 p.
Chemical Engineering
Electroless; Cu-Mn; Underpotential Deposition; Nucleation; Thin Film

Recommended Citations

Citations

  • Yu, L. (2014). Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization [Master's thesis, Case Western Reserve University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=case1396521217

    APA Style (7th edition)

  • Yu, Lu. Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization. 2014. Case Western Reserve University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=case1396521217.

    MLA Style (8th edition)

  • Yu, Lu. "Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization." Master's thesis, Case Western Reserve University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1396521217

    Chicago Manual of Style (17th edition)

case1396521217
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© 2014, some rights reserved.Creative Commons License Electroless Deposition of Copper and Copper-Manganese Alloy for Application in Interconnect Metallization by Lu Yu is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. Based on a work at etd.ohiolink.edu.
This open access ETD is published by Case Western Reserve University School of Graduate Studies and OhioLINK.