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Full text release has been delayed at the author's request until May 06, 2025

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Microwave Assisted Chemical Etching of β-Ga2O3

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2023, Master of Science (M.S.), University of Dayton, Chemistry.
Beta-gallium oxide (BGO) has gained attention in recent years because of its known ultra-wide bandgap, high breakdown electric field, and appropriate mobility, which makes it a promising semiconductor for high-efficiency device applications. In the fabrication process, etching is a critical step in device completion and performance. BGO is widely known to be difficult to etch, due to the strength of its ionic bonds. This difficulty limits the reagents that can etch BGO, which can lead to surface damage and low-aspect ratio architecture. A better etching technique is needed to increase device performance for this semiconductor material. We prove that BGO can be etched without plasma assistance and without the introduction of HF using microwave chemistry. Samples were characterized via atomic force microscopy (AFM) and energy dispersive X-ray spectrometry (EDS).
Judit Beagle (Advisor)
Andrew Green (Committee Member)
Shawn Swavey (Committee Member)
123 p.

Recommended Citations

Citations

  • Sowers, E. A. (2023). Microwave Assisted Chemical Etching of β-Ga2O3 [Master's thesis, University of Dayton]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1681820771230061

    APA Style (7th edition)

  • Sowers, Elizabeth. Microwave Assisted Chemical Etching of β-Ga2O3. 2023. University of Dayton, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=dayton1681820771230061.

    MLA Style (8th edition)

  • Sowers, Elizabeth. "Microwave Assisted Chemical Etching of β-Ga2O3." Master's thesis, University of Dayton, 2023. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1681820771230061

    Chicago Manual of Style (17th edition)