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Understanding Doped Organic Field-Effect Transistors

Abstract Details

2019, PHD, Kent State University, College of Arts and Sciences / Department of Physics.
Doping opens new perspectives for OFETs, as it allows to distinguish majority from minority charge carriers, and, therefore, controls the charge carrier density at equilibrium, or, in other words, shifts the fermi level. In this work, the influence of doping the channel and the contacts of OFETs is systematically studied and an analytical model for doped OFET is developed. Based on the improved understanding of doped OFETs, a special emphasis is put on a novel concept for vertical OFET (VOFET). This holds the promise of a higher transistor performance, i.e. high on currents, transconductance values, and switching speeds in the MHz regime without sophisticated structuring methods. In this work, a novel concept of vertical organic tunnel field-effect transistors (VOTFETs) are proposed and realized, which leads to an improvement of performance in OFET and to a new dimension to tune and study organic transistors.
Lussem Bjorn (Advisor)
Bunge Scott (Committee Member)
Twieg Robert (Committee Chair)
Mann Elizabeth (Committee Member)
Bos Philip (Committee Member)
166 p.

Recommended Citations

Citations

  • Liu, S. (2019). Understanding Doped Organic Field-Effect Transistors [Doctoral dissertation, Kent State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=kent1574127009556301

    APA Style (7th edition)

  • Liu, Shiyi. Understanding Doped Organic Field-Effect Transistors. 2019. Kent State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=kent1574127009556301.

    MLA Style (8th edition)

  • Liu, Shiyi. "Understanding Doped Organic Field-Effect Transistors." Doctoral dissertation, Kent State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=kent1574127009556301

    Chicago Manual of Style (17th edition)