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Spectroscopic Studies of Ytterbium Doped III-Nitride Semiconductors

Wang, Jingzhou
http://orcid.org/0000-0002-8853-583X
http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1249551044

Abstract Details

2009, Master of Science (MS), Ohio University, Electrical Engineering (Engineering and Technology).
In this thesis we report on luminescence of ytterbium (Yb3+) ions-doped GaN and AlN semiconductors. Ytterbium is one of a few lanthanides which has not been extensively investigated as an optically active center in crystalline III-Nitride hosts. In general, observed luminescence spectra of Yb3+-doped GaN and AlN are complex. There are more emission lines than predicted by theory for Yb3+ ions occupying a C3ν symmetry site in these materials. The number of luminescence transition lines observed at low temperature between the spin-orbit levels 2F5/2-2F7/2 indicates that Yb3+ ions are involved in different optically active centers. The luminescence spectra of Yb3+-doped GaN and AlN were measured in 11 K - 300 K temperature range and weak luminescence thermal quenching was observed. The photoluminescence kinetics of Yb3+ ions was measured under different excitation conditions and revealed that Yb3+ ions occupy at least two different lattice sites in GaN and AlN. The nature of these centers and the excitation mechanism was investigated using photoluminescence excitation spectroscopy. The comparison between the emission spectra of Yb3+ ions in the GaN and AlN indicates the presence of some similarities between the lattice locations of Yb3+ ions in these hosts. Based on the obtained experimental data we propose that the luminescence spectra of Yb3+ ions in GaN and AlN result from the existence of a substitutional YbAl,(Ga) site and a VN-Yb complex defect in AlN (GaN) lattice. Furthermore, we have argued that the future research on binary doping of III-Nitrides with Yb3+ and other lanthanides resulting in upconversion processes can enhance energy transfer processes between hosts and RE3+ ion emitting centers and make emission from RE3+-doped III-Nitrides in the visible spectral range more efficient.
Wojciech M. Jadwisienczak, PhD (Advisor)
Martin Kordesch, PhD (Committee Member)
Ralph Whaley, PhD (Committee Member)
Savas Kaya, PhD (Committee Member)
David Matolak, PhD (Committee Chair)
110 p.
Electrical Engineering
Rare earth; Ytterbium; III-Nitride semiconductors

Recommended Citations

Citations

  • Wang, J. (2009). Spectroscopic Studies of Ytterbium Doped III-Nitride Semiconductors [Master's thesis, Ohio University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1249551044

    APA Style (7th edition)

  • Wang, Jingzhou. Spectroscopic Studies of Ytterbium Doped III-Nitride Semiconductors. 2009. Ohio University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1249551044.

    MLA Style (8th edition)

  • Wang, Jingzhou. "Spectroscopic Studies of Ytterbium Doped III-Nitride Semiconductors." Master's thesis, Ohio University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1249551044

    Chicago Manual of Style (17th edition)

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© 2009, all rights reserved.
This open access ETD is published by Ohio University and OhioLINK.