Skip to Main Content
 

Global Search Box

 
 
 
 

Files

File List


osu1116498970.pdf (10.58 MB)

ETD Abstract Container

Abstract Header

Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates

Boeckl, John J.
http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970

Abstract Details

2005, Doctor of Philosophy, Ohio State University, Electrical Engineering.
In this dissertation we report on the structural quality of the GaAs/Ge interface for GaAs nucleation by solid source molecular beam epitaxy (MBE). Through feedback from these characterizations, optimized growth methods are established, demonstrating the ability to grow defect-free epitaxial GaAs films on Ge substrates. We also present data on the electrical activity associated with defects that result if the growth is not fully controlled. In theses studies we exploit a novel use of an electron beam induced current (EBIC) technique to show the electrical activity associated with anti-phase domains and inter-diffusion from regions as small as 100 nm. Integrating this GaAs MBE nucleation methodology on the SiGe graded substrates we show that the GaAs stoichiometry and material properties transfer without degradation from the higher threading dislocation density of the SiGe substrates. In these studies we show that fundamental defects such as; threading dislocation, anti-phase domains, and atomic inter-diffusion are controlled to a level that enables growth of extremely high quality GaAs device layers. Combined with the low TDD enabled by the SiGe graded buffer, record GaAs/Si minority carrier lifetimes in excess of 10 ns have been achieved. However, other larger scale defects are shown to have a limiting effect on large area device performance. One such morphological surface defect, known as the “bat”, is generated during the UHVCVD SiGe growth. The defect was comprehensively studied and results indicate that the impact on GaAs device performance was due to dislocation clusters in MBE device layers. Comparison analysis with GaAs overgrowth via metal organic chemical vapor deposition (MOCVD) demonstrated this growth method produced fully-operational large-area device structure. A model relating surface growth rates to an incomplete lattice-mismatch relaxation predicts the formation of these clusters. While challenges remain for monolithic III/V optoelectronic integration on Si, it is clear that the demonstration of successful GaAs nucleation on the SiGe substrate represents a significant milestone on the path to the final goal of truly integrated III-V devices with Si integrated circuits.
Steven Ringel (Advisor)
212 p.
molecular beam epitaxy; MBE; metal organic chemical vapor deposition; MOCVD; electron beam induced current; EBIC; defects; transmission electron microscopy; TEM

Recommended Citations

Citations

  • Boeckl, J. J. (2005). Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970

    APA Style (7th edition)

  • Boeckl, John. Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates. 2005. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970.

    MLA Style (8th edition)

  • Boeckl, John. "Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates." Doctoral dissertation, Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970

    Chicago Manual of Style (17th edition)

osu1116498970
1,465
© 2005, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.