Skip to Main Content
 

Global Search Box

 
 
 
 

Files

File List


osu1132244278.pdf (1.84 MB)

ETD Abstract Container

Abstract Header

si/sige heterostructures: materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors

Chung, Sung-Yong
http://rave.ohiolink.edu/etdc/view?acc_num=osu1132244278

Abstract Details

2005, Doctor of Philosophy, Ohio State University, Electrical Engineering.
With the advent of the first transistor in 1947, the integrated circuit (IC) industry has rapidly expanded with the tremendous advances in the development of IC technology. The driving force in the evolution of IC technology is the reduction of transistor sizes. Without a doubt, transistor miniaturization will face fundamental physical limitations imposed by further dimensional scaling of silicon transistors in the near future. According to the 2004 International Technology Roadmap for Semiconductors (ITRS), the width of a gate electrode for complementary metal-oxide-semiconductor (CMOS) is projected to be a mere 7 nm by the end of 2018. No further solutions have been found. Since the 2001 ITRS, tunneling devices have been evaluated as an emerging technology to augment silicon CMOS. Transistor circuitry incorporating tunneling devices realized using III-V semiconductors has exhibited superior performance over its transistor-only counterparts. However, due to fundamental differences in material properties, such technology is not readily compatible with the mainstream platforms (>95% market share of semiconductors) of CMOS and HBT technologies. Recently, we demonstrated the successful monolithic integration of Si-based resonant interband tunnel diodes (RITDs) with CMOS and SiGe HBT, which makes them more attractive than III-V based tunnel diodes for system level integration. This dissertation is concerned with the development of quantum functional tunneling devices, RITDs, and high-speed transistors, HBTs, using Si/SiGe heterostructures as well as material growth and electrical properties of Si/SiGe heterostructures. Emphasis is placed on the development of Si/SiGe-based RITDs, HBTs, and their monolithic integration for 3-terminal negative differential resistance (NDR) devices. The operating principles of Si-based RITDs and the integration of RITD with HBT are also discussed.
Paul Berger (Advisor)
sige tunnel diode; quantum device

Recommended Citations

Citations

  • Chung, S.-Y. (2005). si/sige heterostructures: materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1132244278

    APA Style (7th edition)

  • Chung, Sung-Yong. si/sige heterostructures: materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors. 2005. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1132244278.

    MLA Style (8th edition)

  • Chung, Sung-Yong. "si/sige heterostructures: materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors." Doctoral dissertation, Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=osu1132244278

    Chicago Manual of Style (17th edition)

osu1132244278
2,176
© 2005, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.