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Electromigration induced step instabilities on silicon surfaces

Gibbons, Brian J, Jr

Abstract Details

2006, Doctor of Philosophy, Ohio State University, Physics.
Understanding the processes that govern the motion and arrangement of steps on vicinal semiconductor surfaces been a long-standing problem of great scientific interest. From a technological view point, understanding the behavior of surface steps is very important for semiconductor device processing. Recently there has been great interest in processes that lead to the spontaneous arrangement of steps into large surface structure ranging in size from a few nm up to many microns. One fascinating example of this is step bunching on slightly miscut silicon surfaces heated to high temperatures using a direct current, and although the process of step bunching on Si surfaces is well documented experimentally, it remains poorly understood. In this thesis I will report on a sequence of experiments designed to address the complex step bunching behavior observed on Si(111).
Jonathan Pelz (Advisor)
180 p.

Recommended Citations

Citations

  • Gibbons, Jr, B. J. (2006). Electromigration induced step instabilities on silicon surfaces [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1143235175

    APA Style (7th edition)

  • Gibbons, Jr, Brian. Electromigration induced step instabilities on silicon surfaces. 2006. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1143235175.

    MLA Style (8th edition)

  • Gibbons, Jr, Brian. "Electromigration induced step instabilities on silicon surfaces." Doctoral dissertation, Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=osu1143235175

    Chicago Manual of Style (17th edition)