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Electronic properties of stacking-fault induced heterostructures in silicon carbide studied with ballistic electron emission microscopy

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2006, Doctor of Philosophy, Ohio State University, Physics.
The electronic properties of stacking-fault (SF) induced inclusions in hexagonal silicon carbide (SiC) and the valence band structure of 3C- and 4H-SiC are studied using ultrahigh vacuum ballistic electron/hole emission microscopy (BEEM/BHEM). Our contribution to the denuded-zone formation in Si epitaxy on Si(001) is also presented. In recent years, the SF inclusions with local 3C or 8H stacking sequence have been found to form in 4H- or 6H-SiC in various circumstances, which can be of concern in terms of device performance and reliability. We show that both 3C and 8H inclusions behave as electron quantum wells (QWs) by measuring local Schottky barrier heights (SBHs) on and away from inclusions with BEEM. The QW energy level of single SF 3C inclusions formed during 4H-SiC p-i-n diode operation is measured to be ~0.25 eV below the conduction band minimum (CBM) of 4H-SiC. In comparison, a deeper QW energy depth (~0.53 eV) was previously measured on double SF 3C inclusions formed in 4H-SiC during high-temperature processing. From the capacitance-voltage (C-V) measurements and electrostatic modeling on the 2SF sample, we show that free carrier charging of the inclusions in the bulk can reduce the C-V extracted SBH. The QW energy depth of the 8H inclusions formed during 4H-SiC epilayer growth is measured to be ~0.39 eV below 4H-SiC CBM. In addition, we observe the direct effect of the spontaneous polarization difference between 8H- and 4H-SiC on local SBH, as well as the strong reflection of injected hot electrons from subsurface 8H inclusions. The valence band maximum (VBM) of 3C-SiC is estimated to be ~0.06 eV lower than 4H-SiC using BHEM. No evidence of additional VBM in 3C-SiC supports that the second VBM observed in 4H-SiC is a crystal-field split VBM located ~110 meV below the highest VBM. Our earlier study of the denuded-zone formation in Si epitaxy on Si(001) is also described. Both Monte Carlo simulation (small critical cluster) and the continuum model (large critical cluster) are used to investigate how the anisotropy of denuded zones along the fast and slow diffusion directions relates to the anisotropy of corresponding diffusion constants.
Jonathan Pelz (Advisor)
204 p.

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Citations

  • Park, K. (2006). Electronic properties of stacking-fault induced heterostructures in silicon carbide studied with ballistic electron emission microscopy [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1149089614

    APA Style (7th edition)

  • Park, Kibog. Electronic properties of stacking-fault induced heterostructures in silicon carbide studied with ballistic electron emission microscopy. 2006. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1149089614.

    MLA Style (8th edition)

  • Park, Kibog. "Electronic properties of stacking-fault induced heterostructures in silicon carbide studied with ballistic electron emission microscopy." Doctoral dissertation, Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=osu1149089614

    Chicago Manual of Style (17th edition)