Skip to Main Content
 

Global Search Box

 
 
 
 

Files

File List


osu1173103438.pdf (1.66 MB)

ETD Abstract Container

Abstract Header

Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation

Khorsandi, Behrooz
http://rave.ohiolink.edu/etdc/view?acc_num=osu1173103438

Abstract Details

2007, Doctor of Philosophy, Ohio State University, Nuclear Engineering.
There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known – and commercial – codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.
Thomas BLUE (Advisor)
Engineering, Nuclear
Displacement damage; silicon carbide; Monte Carlo methids; count rate; GT-MHR; IRIS

Recommended Citations

Citations

  • Khorsandi, B. (2007). Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1173103438

    APA Style (7th edition)

  • Khorsandi, Behrooz. Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation. 2007. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1173103438.

    MLA Style (8th edition)

  • Khorsandi, Behrooz. "Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation." Doctoral dissertation, Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=osu1173103438

    Chicago Manual of Style (17th edition)

osu1173103438
5,150
© 2007, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.