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Characterization of sub-90 nm Gate Length RF MOSFETs using Large Signal Network Analyzer

Balasubramanian, Venkatesh
http://rave.ohiolink.edu/etdc/view?acc_num=osu1230671230

Abstract Details

2009, Master of Science, Ohio State University, Electrical and Computer Engineering.
This thesis presents a methodology to charaterize sub 90nm gate length RF MOSFETs used for PA applications. First, MATLAB and ADS are used to fit the gate and the drain pads' parameters with the small signal S-parameters measured over a range of frequencies. Then, test beds for Class A and Class B Power Amplifiers in Common Source (CS) and Common Gate (CG) configuration are designed in ADS to compare the simulation results with the measured data from the Large Signal Network Analyzer (LSNA). CG configuration based Power Amplifiers are further studied to test the device symmetry by injecting signals from both the source as well as the drain side. Realizing that over 50% of the output admittance can be accounted by the substrate network, a scheme is developed to study the substrate of the device using LSNA as all the previous models proposed in the literature are based on small signal measurements. Signals are injected at low frequency (600 MHz) and high frequency (4 Ghz) to account for all possible components and LSNA is used to measure injected and reflected parameters. The effect of harmonics on the device performance is studied to find the optimum number of harmonics beyond which there is no appreciable variation in the performance by introducing figure of merits. Finally, pulsed-IV/RF measurements are simulated in ADS for class B operation to validate the experimental test beds involving LSNA.
Dr. Patrick Roblin, Phd (Advisor)
Dr. Mohammed Ismail, PhD (Committee Member)
Dr. Wu Lu, PhD (Committee Member)
94 p.
Electrical Engineering
Large Signal Network Analyzer; LSNA; RF; MOSFET; Power Amplifiers; Device Modeling, ADS, MATLAB

Recommended Citations

Citations

  • Balasubramanian, V. (2009). Characterization of sub-90 nm Gate Length RF MOSFETs using Large Signal Network Analyzer [Master's thesis, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1230671230

    APA Style (7th edition)

  • Balasubramanian, Venkatesh. Characterization of sub-90 nm Gate Length RF MOSFETs using Large Signal Network Analyzer. 2009. Ohio State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1230671230.

    MLA Style (8th edition)

  • Balasubramanian, Venkatesh. "Characterization of sub-90 nm Gate Length RF MOSFETs using Large Signal Network Analyzer." Master's thesis, Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1230671230

    Chicago Manual of Style (17th edition)

osu1230671230
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© 2009, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.