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Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors

Lee, Donghun
http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629

Abstract Details

2010, Doctor of Philosophy, Ohio State University, Physics.
Here we demonstrate the realization of an atomic-scale gate electrode, formed by a charged As vacancy in the GaAs(110) surface. A custom-built low temperature scanning tunneling microscope is used to position these vacancies with atomic precision, thereby tuning the local electrostatic field experienced by single dopant impurities. Tunneling spectroscopy of single dopants such as Mn and Zn acceptors allows us to probe this field, through the shift of an in-gap acceptor resonance peak. The dependence of peak shift on distance reflects an interplay of Coulomb repulsion and band bending produced by the charged vacancy. We also find that the electrostatic field can be used to tune the magnetic coupling between pairs of Mn acceptors, which is promising for spintronics and spin-based quantum information technologies. Local manipulation of electric fields with a charged defect may enable new methods for nanoscale transport, and create new opportunities for studies of ferromagnetism in semiconductors.
Jay Gupta, Dr (Advisor)
Ciriyam Jayaprakash, Dr (Committee Member)
Louis DiMauro, Dr (Committee Member)
Ezekiel Johnston-Halperin, Dr (Committee Member)
153 p.
Physics
Charged vacancy; Single dopant; GaAs

Recommended Citations

Citations

  • Lee, D. (2010). Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629

    APA Style (7th edition)

  • Lee, Donghun. Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors. 2010. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629.

    MLA Style (8th edition)

  • Lee, Donghun. "Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors." Doctoral dissertation, Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629

    Chicago Manual of Style (17th edition)

osu1274913629
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This open access ETD is published by The Ohio State University and OhioLINK.