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N-Polar III-Nitride Optoelectronic Devices

Akyol, Fatih
http://rave.ohiolink.edu/etdc/view?acc_num=osu1307562902

Abstract Details

2011, Master of Science, Ohio State University, Electrical and Computer Engineering.
III-Nitride semiconductors have a tunable direct band gap starting from 0.7 to 6.2 eV, which makes them one of the most useful material systems especially for optoelectronic applications. Regarding to the solar cell applications, the highest efficiencies have been reported by using InGaP/(In)GaAs/Ge multi-junction solar cells. Since this material system is limited with a widest applicable band gap for InGaP around 1.86 eV, highest solar cell efficiencies has been limited by lack of solar cells having a band gap around 2.3 eV. In this research, 2.3 eV InGaN p-i-n solar cells has been simulated and shown that the optimum thickness of the intrinsic layer thickness is a strong function of minority carrier mobility and lifetime. The results indicated that efficiency of InGaN p-n junction solar cells can be enhanced ~35% by using optimized p-i-n designs. III-Nitrides have been widely used for light emitting diode (LED) applications. The researches have been conducted on devices grown various crystal planes including c- (Ga-polar), semi-polar and non-polar planes. However, based on our knowledge, the N-polar orientation of c-plane has not been studied both theoretically and experimentally. Thus, in this report, the Silvaco Atlas simulations have been carried out for both Ga-polar and N-polar single quantum well blue LEDs. The results have pointed out that N-polar LEDs show much less electron and hole overflow current with ~ 1V less turn-on voltage operation compared to Ga-polar LEDs. In the experimental part, the first N-polar green led grown by molecular beam epitaxy (MBE) has been demonstrated. The device showed peak emission wavelengths varying from 564.5 to 540 nm. The full width at half-maximum reduced from 74 to 63 nm as the drive current was increased to 180 A/cm2.
Siddharth Rajan, Prof. (Advisor)
Roberto Myers, Prof. (Committee Member)
145 p.
Solid State Physics

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Citations

  • Akyol, F. (2011). N-Polar III-Nitride Optoelectronic Devices [Master's thesis, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1307562902

    APA Style (7th edition)

  • Akyol, Fatih. N-Polar III-Nitride Optoelectronic Devices. 2011. Ohio State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1307562902.

    MLA Style (8th edition)

  • Akyol, Fatih. "N-Polar III-Nitride Optoelectronic Devices." Master's thesis, Ohio State University, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=osu1307562902

    Chicago Manual of Style (17th edition)

osu1307562902
2,107
© 2011, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.