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Low Frequency Noise Characterization of AlGaN/GaN High Electron Mobility Transistors

Zhang, Ningjiao
http://rave.ohiolink.edu/etdc/view?acc_num=osu1366369049

Abstract Details

2013, Master of Science, Ohio State University, Electrical and Computer Engineering.
Low frequency noise performance is an important aspect of semiconductor transistors evaluation. It is also a macroscopical method of defect spectroscopy. Characterization of low frequency noise performance at different bias conditions can help to locate defects of the devices together with other materials and device characterization techniques. In this work, low frequency noise of non-passivated and passivated AlGaN/GaN high electron mobility transistors (HEMTs) at different bias conditions are carefully measured and studied. By studying band-diagram, defects locations and time constant of the devices, comparing and analyzing meausurement results, we have the following major findings: (1) At the subthreshold region, surface defects trapping and detrapping process dominates the low frequency noise for non-passivated devices while process of defects in AlGaN layer dominates for passivated devices; (2) Contributions of defects at different locations including surface, AlGaN layer, and GaN layer with different time constants have large impact on the frequency exponent of noise power density spectrum based on drain bias low frequency noise spectra; (3) By doing gate bias dependent measurement and related fitting, the results show that carrier number flucuation dominates at small gate bias (near pinch-off) and mobility flucuation becomes more and more dominant as gate bias increases. If the gate bias is large enough that both channel resistance and noise induced by channel resistance are negligible compared to the access region ressistance, low frequency noise power density is independent of gate bias.
Wu Lu (Advisor)
Siddharth Rajan (Committee Member)
57 p.
Electrical Engineering; Materials Science; Solid State Physics
low frequency noise; GaN; defects

Recommended Citations

Citations

  • Zhang, N. (2013). Low Frequency Noise Characterization of AlGaN/GaN High Electron Mobility Transistors [Master's thesis, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1366369049

    APA Style (7th edition)

  • Zhang, Ningjiao. Low Frequency Noise Characterization of AlGaN/GaN High Electron Mobility Transistors. 2013. Ohio State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1366369049.

    MLA Style (8th edition)

  • Zhang, Ningjiao. "Low Frequency Noise Characterization of AlGaN/GaN High Electron Mobility Transistors." Master's thesis, Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1366369049

    Chicago Manual of Style (17th edition)

osu1366369049
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© 2013, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.