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Ting-Hsiang Hung_ECE_Dissertation_2015_2.pdf (6.71 MB)
ETD Abstract Container
Abstract Header
Novel High-k Dielectric Enhanced III-Nitride Devices
Author Info
Hung, Ting-Hsiang
Permalink:
http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419
Abstract Details
Year and Degree
2015, Doctor of Philosophy, Ohio State University, Electrical and Computer Engineering.
Abstract
This dissertation describes the design, fabrication and characterization of high-k dielectric enhanced Gallium Nitride (GaN)-based devices. Interface properties of atomic layer deposited (ALD) Aluminum Oxide (Al
2
O
3
) on GaN was initially investigated. The conduction band offset of Al
2
O
3
/GaN was experimentally found as 2.1 eV. High density of positive interface fixed charge (2.72x10
13
cm
-2
) was observed in the Al
2
O
3
/GaN. These interface fixed charges can not only induce electrical field in the oxide which increases the reverse gate leakage, but shift the threshold voltage toward negative to prevent E-mode operation. A theoretical study using remote impurity scattering along with other scattering models showed that these interface fixed charges are able to degrade the electron mobility in the channel.
Committee
Siddharth Rajan (Advisor)
Steven Ringel (Committee Member)
Aaron Arehart (Committee Member)
Pages
159 p.
Subject Headings
Electrical Engineering
Keywords
GaN, HEMT, MISHEMT, MOSFET, ALD, Al2O3, InGaN, AlGaN, Ga2O3
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Citations
Hung, T.-H. (2015).
Novel High-k Dielectric Enhanced III-Nitride Devices
[Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419
APA Style (7th edition)
Hung, Ting-Hsiang.
Novel High-k Dielectric Enhanced III-Nitride Devices.
2015. Ohio State University, Doctoral dissertation.
OhioLINK Electronic Theses and Dissertations Center
, http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419.
MLA Style (8th edition)
Hung, Ting-Hsiang. "Novel High-k Dielectric Enhanced III-Nitride Devices." Doctoral dissertation, Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419
Chicago Manual of Style (17th edition)
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Document number:
osu1437684419
Download Count:
1,289
Copyright Info
© 2015, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.