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Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction

Someswaran, Preethi

Abstract Details

2015, Master of Science, Ohio State University, Electrical and Computer Engineering.
This objective of this work is to develop predictive device modelling methodology to relate the physical behavior of AlGaN/GaN HEMTs with RF power amplifier parameters. The large signal performance of two 0.25µmx100µm GaN transistors –a standard HEMT with a recessed gate and a graded channel HEMT were analyzed at a frequency of 20 Ghz using the model. The devices are simulated in Silvaco Atlas TCAD with a velocity saturation model to obtain the high frequency two port network parameters. From these, the small signal circuit components of the device were extracted as a function of gate voltage, drain voltage and frequency. Harmonic balance simulations were performed in ADS to obtain the output power and linearity characteristics. The choice of bias points to maximize linearity from the device was explored.
Siddharth Rajan (Advisor)
Wu Lu (Committee Member)
83 p.

Recommended Citations

Citations

  • Someswaran, P. (2015). Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction [Master's thesis, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1440392889

    APA Style (7th edition)

  • Someswaran, Preethi. Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction. 2015. Ohio State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1440392889.

    MLA Style (8th edition)

  • Someswaran, Preethi. "Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction." Master's thesis, Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1440392889

    Chicago Manual of Style (17th edition)