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Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials

Reinke, Benjamin T

Abstract Details

2016, Doctor of Philosophy, Ohio State University, Nuclear Engineering.
A Cryogenic Irradiation Facility (CRIF) has been designed, fabricated, and tested for use in the pool of the Ohio State University Research Reactor (OSURR). This CRIF has supported in situ radiation induced damage experiments in optical and electronic materials at cryogenic temperatures and temperature controlled low temperature annealing experiments from cryogenic temperatures to above room temperature. The facility has been tested with liquid nitrogen and liquid helium out of the reactor pool. Temperature control has been demonstrated in the experimental volume of the CRIF from 4.2 K to above room temperature. The 10" Dry Tube, which will house the CRIF in the OSURR pool, has been inserted into OSURR pool and tested. The empty 10" Dry Tube and the CRIF have been simulated in a model of the OSURR using MCNP6 to understand the predicted radiation fields and total energy deposition in the empty 10" Dry Tube and in typical optical and electronic materials in the experimental volume of the CRIF. The radiation fields and the total radiation energy deposition have been used to predict experimental operating parameters for CRIF experiments, based upon desired dose calculations and time to boil-off for the liquid helium inside the CRIF. The CRIF has been used for four sets of experiments on single-mode and multi-mode silica optical fibers, in conjunction with a Luna Optics Optical Backscatter Reflectometer and an optical transmission measurement system, and on GaN High Electron Mobility Transistors, in conjunction with an integrated NI PXI Electronics Measurements System. These four experiments included (1) cryogenic materials characterization experiments without radiation, (2) gamma-only cryogenic irradiation experiments and low temperature annealing experiments, (3) reactor-on mixed field cryogenic irradiation experiments and low temperature annealing experiments, and (4) reactor-on mixed field room temperature irradiation experiments. These experiments were all completed at the OSU Nuclear Reactor Laboratory. The experiments demonstrated varying effects on the materials under test, depending on the temperature of the experiments and the radiation type, dose rate, and total dose of the experiments. The flexibility of the CRIF, in allowing for in situ measurements during cryogenic irradiation periods and during cooling/heating portions of the experiments, was shown to be vital in observing the complicated combined effects of the cryogenic irradiation.
Thomas Blue (Advisor)
Wolfgang Windl (Committee Member)
Tunc Aldemir (Committee Member)
Lei Cao (Committee Member)
403 p.

Recommended Citations

Citations

  • Reinke, B. T. (2016). Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1452250518

    APA Style (7th edition)

  • Reinke, Benjamin. Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials. 2016. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1452250518.

    MLA Style (8th edition)

  • Reinke, Benjamin. "Cryogenic Irradiation and Low Temperature Annealing of Semiconductor and Optical Materials." Doctoral dissertation, Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1452250518

    Chicago Manual of Style (17th edition)