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Non-Contact Probes: A Novel Approach for On-Wafer Characterization of Millimeter-Wave and Sub-Millimeter-Wave Devices and Integrated Circuits

Caglayan, Cosan
http://rave.ohiolink.edu/etdc/view?acc_num=osu1461163685

Abstract Details

2016, Doctor of Philosophy, Ohio State University, Electrical and Computer Engineering.
A novel, non-contact metrology approach for on-wafer characterization of sub-mmW devices, components, and integrated circuits (ICs) is presented. Conventional contact probes are extremely limited for sub-mmW measurements due to increasing losses and inherently large parasitics. They are also very costly and suffer from physical fragility issues. As such, device testing in the 0.3-3 THz remains a specialty of few research groups that can shoulder the high cost of operating and maintaining such setups. Unlike existing contact probes which rely on fragile tips and physical contact with the device on the chip, the new non-contact probes are based on electromagnetic coupling of vector network analyzer (VNA) test ports into the coplanar waveguide (CPW) environment of the integrated devices and circuits. Efficient signal coupling is achieved via a quasi-optical link between the VNA ports and planar antennas that are monolithically integrated with the device-under-test. The test chip is then interfaced with an extended hemispherical lens on the back side to collimate the VNA port signals onto the non-contact probe antennas. These antennas act as "virtual'' probe-tips on the test chip and connect to the device through optimized, impedance matched CPW lines. Radiation patterns and the impedance performance of the probe antennas are optimized using in-house moment method tools for robust and broadband quasi-optical coupling of the VNA ports. Repeatable errors of the non-contact probe setup are calibrated using on-wafer standards, allowing for accurate S-parameter measurements. Experimental validation of the new non-contact device metrology system is presented via measurement of 1-port and 2-port devices in the 90-750 GHz band. Demonstration of active non-contact probes is carried out by characterization of an on-chip integrated Schottky diode. Moreover, differential-mode on-wafer measurements beyond 110 GHz are presented for the first time. Owing to the non-contact nature, the proposed approach is free from wear and tear and fragility issues. More importantly, they are low-cost and can be easily scaled beyond 1 THz where there is no existing solution for on-chip device and IC testing.
Kubilay Sertel (Advisor)
Niru K. Nahar (Committee Member)
John L. Volakis (Committee Member)
Sidiropoluos Anastasios (Other)
185 p.
Electromagnetics

Recommended Citations

Citations

  • Caglayan, C. (2016). Non-Contact Probes: A Novel Approach for On-Wafer Characterization of Millimeter-Wave and Sub-Millimeter-Wave Devices and Integrated Circuits [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1461163685

    APA Style (7th edition)

  • Caglayan, Cosan. Non-Contact Probes: A Novel Approach for On-Wafer Characterization of Millimeter-Wave and Sub-Millimeter-Wave Devices and Integrated Circuits. 2016. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1461163685.

    MLA Style (8th edition)

  • Caglayan, Cosan. "Non-Contact Probes: A Novel Approach for On-Wafer Characterization of Millimeter-Wave and Sub-Millimeter-Wave Devices and Integrated Circuits." Doctoral dissertation, Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1461163685

    Chicago Manual of Style (17th edition)

osu1461163685
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© 2016, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.