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Low Frequency Noise Characteristics of ZnO Nanowire Field Effect Transistors

Xue, Hao
http://rave.ohiolink.edu/etdc/view?acc_num=osu1480634914772288

Abstract Details

2016, Master of Science, Ohio State University, Electrical and Computer Engineering.
In this MS thesis study, we investigate the low frequency noise characteristics of ZnO nanowire field effect transistors (FETs). Three low frequency noise models including Hooge’s model, Carrier Number Fluctuation (CNF) model, and CNF correlated with mobility fluctuation model are applied to the nanowire FETs case to study the mechanism of the low frequency noise. The 1/f noise power spectrum density is observed in both room temperature and low temperature down to 10K.
Wu Lu (Advisor)
Siddharth Rajan (Committee Member)
47 p.
Electrical Engineering
ZnO, nanowire, low frequency noise, low temperature, trap density

Recommended Citations

Citations

  • Xue, H. (2016). Low Frequency Noise Characteristics of ZnO Nanowire Field Effect Transistors [Master's thesis, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1480634914772288

    APA Style (7th edition)

  • Xue, Hao. Low Frequency Noise Characteristics of ZnO Nanowire Field Effect Transistors. 2016. Ohio State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1480634914772288.

    MLA Style (8th edition)

  • Xue, Hao. "Low Frequency Noise Characteristics of ZnO Nanowire Field Effect Transistors." Master's thesis, Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1480634914772288

    Chicago Manual of Style (17th edition)

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This open access ETD is published by The Ohio State University and OhioLINK.