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SMM_Diagnostics.pdf (7.89 MB)
ETD Abstract Container
Abstract Header
Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas
Author Info
Helal, Yaser H
Permalink:
http://rave.ohiolink.edu/etdc/view?acc_num=osu1483396745873412
Abstract Details
Year and Degree
2017, Doctor of Philosophy, Ohio State University, Physics.
Abstract
Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma chamber. The measurement of transmission spectra was simultaneously fit for background and absorption signal. The measured absorption signal was used to calculate absolute densities and temperatures of polar species. Measurements of molecular species were demonstrated for inductively coupled plasmas.
Committee
Frank De Lucia (Advisor)
Louis DiMauro (Committee Member)
Richard Furnstahl (Committee Member)
Thomas Lemberger (Committee Member)
Pages
103 p.
Subject Headings
Physics
Keywords
submillimeter
;
terahertz
;
microwave
;
spectroscopy
;
plasma diagnostics
;
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Citations
Helal, Y. H. (2017).
Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas
[Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1483396745873412
APA Style (7th edition)
Helal, Yaser.
Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas.
2017. Ohio State University, Doctoral dissertation.
OhioLINK Electronic Theses and Dissertations Center
, http://rave.ohiolink.edu/etdc/view?acc_num=osu1483396745873412.
MLA Style (8th edition)
Helal, Yaser. "Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas." Doctoral dissertation, Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1483396745873412
Chicago Manual of Style (17th edition)
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Document number:
osu1483396745873412
Download Count:
448
Copyright Info
© 2017, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.