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Short Circuit Capability and Degradation Mechanism Analysis of E-mode GaN HEMT

Li, Xiao
http://orcid.org/0000-0002-0222-074X
http://rave.ohiolink.edu/etdc/view?acc_num=osu1492643687305536

Abstract Details

2017, Master of Science, Ohio State University, Electrical and Computer Engineering.
Gallium Nitride High Electron Mobility Transistor (GaN HEMT) has become one of the most attractive power transistors in recent years due to its superior electrical and thermal performance. While GaN devices have been used in more and more applications, short circuit capability of GaN HEMT and the method to qualify its reliability still worth discussion. This report presents the short circuit behavior of discrete 650 V/ 30 A large current rating Enhancement-mode (E-mode) GaN HEMT devices under single and repetitive short circuit operations. Firstly, structure and characteristics of GaN HEMT are introduced. Both cross-section structure of the lateral power transistor and gate structure of normally-off GaN HEMT are presented. Next, detailed test platform design is presented. The platform is established based on hard switching fault (HSF) circuit, and the turn-off transient is evaluated, which proved that soft turn-off is required for GaN HEMT short circuit tests. Besides, a system level thermal model based on FEA simulation and Cauer thermal network is established to have an accurate prediction of devices junction temperature. Then, short circuit roughness has been explored through designed tests, from these tests, maximum short circuit time, short circuit critical energy, as well as short circuit failure behavior and the mechanism is explored and analyzed. For the repetitive short circuit degradation tests, a series of experimental tests are carried out to determine the number of short circuit operations the devices can support before obvious degradation happens under different dissipated energies. More importantly, device static characteristics are explored and monitored during the degradation tests, and the characteristics shifting has been investigated and acts as the indicators of devices degradation. For different kinds of test, including failure condition, test waveforms are presented together with detailed analysis and mechanism discussion.
Jin Wang (Advisor)
Fang Luo (Committee Member)
57 p.
Electrical Engineering
GaN HEMT, short circuit capability, degradation mechanism

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Citations

  • Li, X. (2017). Short Circuit Capability and Degradation Mechanism Analysis of E-mode GaN HEMT [Master's thesis, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1492643687305536

    APA Style (7th edition)

  • Li, Xiao. Short Circuit Capability and Degradation Mechanism Analysis of E-mode GaN HEMT. 2017. Ohio State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1492643687305536.

    MLA Style (8th edition)

  • Li, Xiao. "Short Circuit Capability and Degradation Mechanism Analysis of E-mode GaN HEMT." Master's thesis, Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1492643687305536

    Chicago Manual of Style (17th edition)

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© 2017, all rights reserved.
This open access ETD is published by The Ohio State University and OhioLINK.