Skip to Main Content
 

Global Search Box

 
 
 

ETD Abstract Container

Abstract Header

Design and Heterogeneous Integration of Single and Dual Band Pulse Modulated Class E RF Power Amplifiers

Rashid, S M Shahriar

Abstract Details

2018, Doctor of Philosophy, Ohio State University, Electrical and Computer Engineering.
Compound semiconductor substrates are being popular for high power amplifiers, predominantly due to their much greater breakdown voltages and lower substrate losses compared to deeply scaled Silicon devices. Besides, more and more features are being integrated in modern portable wireless devices, which require very efficient transmitter architectures, as well as very high output power densities per unit areas. Consequently, switched mode power amplifiers are becoming more lucrative due to their much superior efficiencies compared to the linear PAs. Especially, class E PAs are gaining most of the attentions at high frequencies, primarily because of their simple matching networks, which are not only efficient and compact when implemented on chip, these simple circuits also allow multi-band operations, resulting in much greater output power densities. However for optimum performance, these PAs need pulse modulated signals, usually produced in cheaper substrates, like Silicon. Under this circumstance, the scope of this research involves different aspects of the heterogeneous integration of the aforementioned two dissimilar substrates. First of all, different pre-amplifying driver topologies are proposed and customized in Silicon, as well as in heterojunction substrates, in order to facilitate the interfacing. With these novel ideas, both the power and the area consumption could be greatly minimized, while providing wideband operations. As a result, PWM signals could be utilized to modulate the output power of these non-linear PAs, which are inherently insensitive to the variations of the input signal amplitudes. A novel dynamic biasing technique is also demonstrated to eliminate the problem of uneven pulse amplitudes of the PWM signals, as would be the case with classic fixed biasing schemes. Elaborate theoretical analysis are provided for the PWM and dual band class E PAs, which are geared towards finding the optimum design methodology, unlike the mathematical studies available in existing literature. The prototype circuits are implemented in Silicon, GaAs and GaN processes. Alongside very compact footprints, the test results of the proposed drivers demonstrate very low power wideband operations. The dual band PAs also produce very impressive results when measured independently. Finally, the Silicon and the III-V chips are successfully integrated for the sake of the validation of the concept. To the best of the author's knowledge, this is the first attempt of heterogeneous integration of CMOS pulse modulators with heterojunction SMPAs.
Waleed khalil, Dr. (Advisor)
Patrick Roblin, Dr. (Committee Member)
Ayman Fayed, Dr. (Committee Member)
136 p.

Recommended Citations

Citations

  • Rashid, S. M. S. (2018). Design and Heterogeneous Integration of Single and Dual Band Pulse Modulated Class E RF Power Amplifiers [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1543505207173487

    APA Style (7th edition)

  • Rashid, S M Shahriar. Design and Heterogeneous Integration of Single and Dual Band Pulse Modulated Class E RF Power Amplifiers. 2018. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1543505207173487.

    MLA Style (8th edition)

  • Rashid, S M Shahriar. "Design and Heterogeneous Integration of Single and Dual Band Pulse Modulated Class E RF Power Amplifiers." Doctoral dissertation, Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1543505207173487

    Chicago Manual of Style (17th edition)