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High Al-content AlGaN channel transistor for high power and high frequency application

Xue, Hao
http://rave.ohiolink.edu/etdc/view?acc_num=osu1619098826073475

Abstract Details

2021, Doctor of Philosophy, Ohio State University, Electrical and Computer Engineering.
Superior material properties of AlGaN make it a promising candidate as a channel material for high power mm-wave transistors due to its large bandgap and high breakdown field. However, there are critical technical challenges to develop field effect transistors based on this ultra-wide bandgap (UWBG) semiconductor, AlGaN. This Ph D. research aims to address the issues on the development of high Al-content AlGaN channel transistors for RF applications. The key contributions of this Ph.D research to the UWBG research field are: (1). The high contact resistance on AlGaN channel transistors limits the device RF performance. To minimize the contact resistance, three approaches of ohmic contact formation have been designed on AlGaN heterojunction field effect transistors. We demonstrated low contact resistance and record high RF performance using the proposed approaches. (2). Second, comprehensive small signal modeling is performed on AlGaN channel transistors showing the device scaling is necessary to accelerate electrons to vsat and parasitic resistance and capacitance need to be minimized for higher fT/fMAX values. (3). FinFET-like design, in this study we call it the micro-channel design, is first demonstrated on AlGaN channel transistors for better electron injection. Maximum current density is doubled in comparison with planar devices. The device exhibits an RF output power of 2.7 W/mm at 10 GHz, which is the highest value reported on Al-rich AlGaN channel transistors. (4). Record high current density of 105 mA/mm was achieved on enhancement mode AlGaN transistors by fluorine plasma treatment. Small signal performance of enhancement mode AlGaN devices is first demonstrated in this research. All these results show the potential for AlGaN based transistors as next generation power amplifiers at mm-wave frequencies.
Wu Lu (Advisor)
Siddharth Rajan (Committee Member)
Patrick Roblin (Committee Member)
102 p.
Electrical Engineering

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Citations

  • Xue, H. (2021). High Al-content AlGaN channel transistor for high power and high frequency application [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1619098826073475

    APA Style (7th edition)

  • Xue, Hao. High Al-content AlGaN channel transistor for high power and high frequency application. 2021. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1619098826073475.

    MLA Style (8th edition)

  • Xue, Hao. "High Al-content AlGaN channel transistor for high power and high frequency application." Doctoral dissertation, Ohio State University, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=osu1619098826073475

    Chicago Manual of Style (17th edition)

osu1619098826073475
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This open access ETD is published by The Ohio State University and OhioLINK.