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Development of a Non-Volatile Memristor Device Based on a Manganese-Doped Titanium Oxide Material

Ordosgoitti, Jorhan Rainier
http://rave.ohiolink.edu/etdc/view?acc_num=toledo1290131827

Abstract Details

2010, Master of Science in Electrical Engineering, University of Toledo, Electrical Engineering.
Flash Memory is the current predominant technology in the non-volatile memory market. It has gained popularity due to its rapid increase in reliability, storage density and the reduction of cost. This has been possible because this technology has borrowed a large amount of collected knowledge from complementary metal oxide semiconductor (CMOS) technology helping to its fast development and optimization. Unfortunately, in line with the CMOS transistor technology, scaling of Flash devices is becoming harder to obtain in a reliable way due to the limitations of the current lithography technology. As a result, semiconductor companies are finding it hard to supply the increasing market demand for the higher density non-volatile memories. The recent invention of memristor devices has given hope to semiconductor companies by offering an easier way to increase the storage density by using the current fabrication technology. This is possible because memristor devices only requires two terminals in order to operate, which uses less wafer space, reduces the complexity of circuit interconnections, and facilitates high density integration when used in crossbar structures. Additionally, the main limitation of the flash memory devices is the quality and reliability of the tunnel oxide, which is not present in memristor devices. Due to these advantages, it is expected that the memristor devices will outperform flash memory in scalability, speed and endurance. However, memristor devices are relatively new compared to flash memory technology, for this reason, researches like this one are needed in order to gain a better understanding of the memristor operation, to identify the ways to improve its performance and to understand its limitations. Eventually, all the effort put into researching this device will pay off and soon memristor devices will become the new predominant non-volatile technology replacing the aging flash memory devices.
Dr. Rashmi Jha (Committee Chair)
Dr. Christopher Melkonian (Committee Member)
Dr. Mansoor Alam (Committee Member)
Dr. Vijay K. Devabhaktuni (Committee Member)
116 p.
Electrical Engineering
Volatile; Non-Volatile; Memristor; Manganese; Titanium; Oxide; Flash; Memory

Recommended Citations

Citations

  • Ordosgoitti, J. R. (2010). Development of a Non-Volatile Memristor Device Based on a Manganese-Doped Titanium Oxide Material [Master's thesis, University of Toledo]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1290131827

    APA Style (7th edition)

  • Ordosgoitti, Jorhan. Development of a Non-Volatile Memristor Device Based on a Manganese-Doped Titanium Oxide Material. 2010. University of Toledo, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=toledo1290131827.

    MLA Style (8th edition)

  • Ordosgoitti, Jorhan. "Development of a Non-Volatile Memristor Device Based on a Manganese-Doped Titanium Oxide Material." Master's thesis, University of Toledo, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1290131827

    Chicago Manual of Style (17th edition)

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This open access ETD is published by University of Toledo and OhioLINK.