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El-Amin_Thesis_2014EECS.pdf (4.8 MB)

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Investigation of Semitransparent Cu2O/ZnO Based Heterostructure Diodes for Memory and Related Applications

El-Amin, Ammaarah Haleemah
http://rave.ohiolink.edu/etdc/view?acc_num=toledo1388761525

Abstract Details

2014, Master of Science in Electrical Engineering, University of Toledo, Electrical Engineering.
The purpose of this study is twofold: (1) to investigate the diode properties of semitransparent Cu2O/ZnO based heterostructures and to (2) demonstrate the memory applications of these properties. This structure is included in a Ru/Zn/ZnO/Cu2O/Cu stack and characterized as a pn heterojunction diode for crossbar array (CBA) implementation. CBA architecture is the most favorable architecture for many novel memory devices. The basic diode parameters are extracted and discussed in relation to their functional relevance. For example if the diode were used in a diode tile for use in Boolean logic mosaics (composites of device tiles) or other diode applications (using CBA architecture). The diode is also characterized for use in conjunction with RRAM (two terminal digital memristive) devices. In that capacity it is used to prevent crosstalk (sneak current between devices leading to false readings). Several diode parameters are studied, in addition the reverse saturation current is modulated by varying the thickness of the Cu2O layer. The Cu2O/ZnO heterojunction is also used to form an FTO/ZnO/Cu2O/Cu memdiode. This is a novel memelement, displaying a combination of rectification and hysteretic behavior in the IV. FTO and ZnO are both transparent, while Cu2O is partially so. The Cu is less important to memdiode operation and could theoretically be replaced with a transparent material. All of these materials are deposited at temperatures less than 100 °C which is a safe range for fabrication on plastic substrates. The basic parameters for this memdiode are extracted and a comprehensive device physics model is presented to explain the experimental results. Dielectric relaxation and spontaneous polarization effects are seen in ZnO/Cu2O, while the FTO is expected to contribute to the defect movement through the device. This Cu2O/ZnO heterojunction is very favorable for memory applications due to its unique analog behavior in the FTO/ZnO/Cu2O/Cu stack. Its characterization as a RRAM access device also provides a helpful model for the experimental methods required for this type of characterization
Rashmi Jha (Committee Chair)
David Strickler (Committee Member)
Srinivasa Vemuru (Committee Member)
Richard Molyet (Committee Member)
137 p.
Engineering
Memdiode, electronics, pn junction, ZnO

Recommended Citations

Citations

  • El-Amin, A. H. (2014). Investigation of Semitransparent Cu2O/ZnO Based Heterostructure Diodes for Memory and Related Applications [Master's thesis, University of Toledo]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1388761525

    APA Style (7th edition)

  • El-Amin, Ammaarah. Investigation of Semitransparent Cu2O/ZnO Based Heterostructure Diodes for Memory and Related Applications. 2014. University of Toledo, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=toledo1388761525.

    MLA Style (8th edition)

  • El-Amin, Ammaarah. "Investigation of Semitransparent Cu2O/ZnO Based Heterostructure Diodes for Memory and Related Applications." Master's thesis, University of Toledo, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1388761525

    Chicago Manual of Style (17th edition)

toledo1388761525
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This open access ETD is published by University of Toledo and OhioLINK.