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NiOx Based Device Structures

Khan, Kamruzzaman
http://rave.ohiolink.edu/etdc/view?acc_num=toledo1469380686

Abstract Details

2016, Master of Science, University of Toledo, Electrical Engineering.
Semiconducting oxides are really important for their use in optoelectronics and photo catalytic applications. While other semiconducting oxides (e.g., ZnO, TiO2, and SnO2) have been widely studied for various applications, the potential applications of NiO have not been explored to any significant degree. NiOx based devices can open up new horizons in this relevant field. Nickel oxide (NiO), zinc oxide (ZnO) and hafnium oxide (HfO2) films and sandwich structures were fabricated and characterized after first identifying the desired growth conditions. NiOx based p-n junction (NiO/ZnO) and Metal-insulator-semiconductor (MIS) structures (Ni/NiO/HfO2/Ni) were fabricated and characterized. In the NiO/ZnO case, rectifying behavior based on the current-voltage characteristics was observed, which also depend on the contact resistance i.e., Al:ZnO in our case. Capacitance vs. voltage measurements at various frequencies were performed as well and the dependence of capacitance on frequency and the depletion region width was examined. In the case of Ni/NiO/HfO2/Ni, this MIS structures with three different thickness were systematically studied and negative differential resistance (NDR) characteristics were found for over a narrow HfO2 thickness range. A possible mechanism for this NDR behavior was proposed based on the energy band diagram structure bending and bias induced changes, involving a tunneling current. In addition, weak visible light emission from both types of structures under bias was observed and a possible explanation was presented.
Daniel Georgiev, Dr. (Committee Chair)
Richard G. Molyet, Dr. (Committee Member)
Anthony Johnson, Dr. (Committee Member)
135 p.
Electrical Engineering
Light emission, Tunneling Diode, Heterojunctions

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Citations

  • Khan, K. (2016). NiOx Based Device Structures [Master's thesis, University of Toledo]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1469380686

    APA Style (7th edition)

  • Khan, Kamruzzaman. NiOx Based Device Structures. 2016. University of Toledo, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=toledo1469380686.

    MLA Style (8th edition)

  • Khan, Kamruzzaman. "NiOx Based Device Structures." Master's thesis, University of Toledo, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1469380686

    Chicago Manual of Style (17th edition)

toledo1469380686
2,064
© 2016, all rights reserved.
This open access ETD is published by University of Toledo and OhioLINK.