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Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-Uniform Base Doping

VUMMIDI MURALI, KRISHNA PRASAD
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060110500

Abstract Details

2003, MS, University of Cincinnati, Engineering : Electrical Engineering.
In the past few years, GaAs and InP and, more recently, GaN based Npn and Pnp Heterojunction Bipolar Transistors (HBTs) have been grown and their performance has been evaluated in great details due to their potential applications in microwave, millimeter-wave, optoelectronics and high-speed applications. This model includes the physics of hole thermionic-emission-diffusion injection at the emitter-base heterojunction and transport of holes across a linearly doped base, a calculation of the recombination currents in the base current including the effects of linear base doping, and a comparison of the effects of linear and uniform doping on current gain and base transit time. Our simulations show that the use of non-uniform doping in the base of Pnp HBTs helps increasing the DC current gain by as much as a factor of 4. Simultaneously, we show that the base transit time, which is the major component to the overall delay time, is reduced by factor of 2. This should help increasing the unit current gain frequency and high frequency performance of Pnp HBTs.
Dr. Marc M. Cahay (Advisor)
128 p.
HBT; linear doping; InAlAs/InGaAs; Pnp transistors

Recommended Citations

Citations

  • VUMMIDI MURALI, K. P. (2003). Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-Uniform Base Doping [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060110500

    APA Style (7th edition)

  • VUMMIDI MURALI, KRISHNA PRASAD. Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-Uniform Base Doping. 2003. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060110500.

    MLA Style (8th edition)

  • VUMMIDI MURALI, KRISHNA PRASAD. "Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-Uniform Base Doping." Master's thesis, University of Cincinnati, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060110500

    Chicago Manual of Style (17th edition)

ucin1060110500
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© 2003, all rights reserved.
This open access ETD is published by University of Cincinnati and OhioLINK.