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DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS

BALARAMAN, PRADEEP ARUGUNAM
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786

Abstract Details

2003, MS, University of Cincinnati, Engineering : Electrical Engineering.
Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb heterojunction bipolar transistors (HBTs). GaAsSb lattice matched to InP has an energy bandgap (0.72 eV) that is similar to that of InGaAs (0.75eV) so that Sb-based HBTs have been proposed as a replacement for InGaAs-based HBTs. In particular, the conduction band lineup is more favorable at the base-collector,which makes the GaAsSb-based HBTs especially attractive for double heterojunction bipolar transistors (DHBTs) where higher breakdown voltages are desired. In this work,the results of device modeling will be compared initially with recent experimental reports to validate the modeling approach. Then the design and operation of the devices will be examined to investigate the factors controlling device performance in order to facilitate improvements in device design. The degradation of device performance at high currents due to the formation of a parasitic barrier in the collector region and the base push out effects is examined. Finally, a device structure with improved high frequency performance is described.
Dr. Kenneth P. Roenker (Advisor)
169 p.
InP/GaAsSb/InP; Heterojunction bipolar transistor; device physics; simulation, modeling

Recommended Citations

Citations

  • BALARAMAN, P. A. (2003). DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786

    APA Style (7th edition)

  • BALARAMAN, PRADEEP. DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS. 2003. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.

    MLA Style (8th edition)

  • BALARAMAN, PRADEEP. "DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS." Master's thesis, University of Cincinnati, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786

    Chicago Manual of Style (17th edition)

ucin1069275786
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© 2003, all rights reserved.
This open access ETD is published by University of Cincinnati and OhioLINK.