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DESIGN AND SIMULATION OF SiGe HBT FOR POWER APPLICATIONS AT 10GHz

SAMPATHKUMARAN, RAMANUJAN

Abstract Details

2004, MS, University of Cincinnati, Engineering : Electrical Engineering.
The operation frequency of the communication systems like cell phones and LANs vary from 900MHz to 5.5GHz. For satellite communications the operating frequency is about 10 GHz. While a Si BJT works well for frequencies less than 2GHz, for high frequencies, III-V based transistors are used. Apart from being more expensive than the Si based technology, the III-V’s cannot be integrated into Si based CMOS technology. Hence it is necessary to develop a power amplifier that can work at higher frequency that can be integrated into Si technology. SiGe HBTs are cost effective and can be integrated into Si technology, thus making system on chip a reality. This work examines the epilayer design, geometrical layout and self-heating effects of a SiGe HBT in an effort to improve its high frequency performance.
Dr. Kenneth Roenker (Advisor)
162 p.

Recommended Citations

Citations

  • SAMPATHKUMARAN, R. (2004). DESIGN AND SIMULATION OF SiGe HBT FOR POWER APPLICATIONS AT 10GHz [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1085582751

    APA Style (7th edition)

  • SAMPATHKUMARAN, RAMANUJAN. DESIGN AND SIMULATION OF SiGe HBT FOR POWER APPLICATIONS AT 10GHz. 2004. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1085582751.

    MLA Style (8th edition)

  • SAMPATHKUMARAN, RAMANUJAN. "DESIGN AND SIMULATION OF SiGe HBT FOR POWER APPLICATIONS AT 10GHz." Master's thesis, University of Cincinnati, 2004. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1085582751

    Chicago Manual of Style (17th edition)