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SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW

ARNOLD, MARTIN KEITH, JR.
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528

Abstract Details

2007, MS, University of Cincinnati, Engineering : Electrical Engineering.
The purpose of this study is to examine the performance capabilities and scaling behavior of short channel Ge-based n-MOSFETs using a commercial numerical device simulator from ISE Corporation. This thesis will describe the results of DC and small signal AC simulations of the device’s transistor characteristics and compare them with those for a silicon device of the same geometry and size. We will also examine the effects of variations in the device structure on the Ge MOSFET’s performance, including the transconductance and high frequency response.
Dr. Kenneth Roenker (Advisor)
152 p.
germanium; mosfet

Recommended Citations

Citations

  • ARNOLD, JR., M. K. (2007). SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528

    APA Style (7th edition)

  • ARNOLD, JR., MARTIN. SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW. 2007. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528.

    MLA Style (8th edition)

  • ARNOLD, JR., MARTIN. "SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW." Master's thesis, University of Cincinnati, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528

    Chicago Manual of Style (17th edition)

ucin1175024528
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© 2007, all rights reserved.
This open access ETD is published by University of Cincinnati and OhioLINK.