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Simulation Study of Device Characteristics and Short Channel Effects of Nanoscale Germanium Channel Double-Gate MOSFETs

Gangadharan, Divya
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1226530654

Abstract Details

2008, MS, University of Cincinnati, Engineering : Electrical Engineering.
In the endeavor to increase integrated circuit chip densities and improve performance, MOSFET dimensions have been rapidly decreasing over the past four decades. In the next decade, gate (channel) lengths will be scaled to 10 nm and possibly lower. A shorter channel enables faster switching, however new effects come into play at these nanoscale dimensions that are detrimental to transistor performance. These effects called Short Channel Effects (SCEs) are important criteria when designing a device for operation at the nanoscale regime. Device design can involve changing the device structure as well as the material parameters of the device. Using a Double-Gate structure for MOSFETs can be very effective in controlling short channel effects since the double gate structure offers superior gate control of the channel. Germanium is a very attractive channel material for MOSFETs since it can offer higher transconductance due to its superior electron and hole mobilities. In this simulation study, the potentials and limitations of using a Germanium channel Double-Gate MOSFET at nanoscale dimensions is investigated.
Kenneth P. Roenker (Advisor)
Marc M. Cahay (Committee Member)
Punit Boolchand (Committee Member)
103 p.
Electrical Engineering; Engineering
MOSFETs; Germanium; double-gate

Recommended Citations

Citations

  • Gangadharan, D. (2008). Simulation Study of Device Characteristics and Short Channel Effects of Nanoscale Germanium Channel Double-Gate MOSFETs [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1226530654

    APA Style (7th edition)

  • Gangadharan, Divya. Simulation Study of Device Characteristics and Short Channel Effects of Nanoscale Germanium Channel Double-Gate MOSFETs. 2008. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1226530654.

    MLA Style (8th edition)

  • Gangadharan, Divya. "Simulation Study of Device Characteristics and Short Channel Effects of Nanoscale Germanium Channel Double-Gate MOSFETs." Master's thesis, University of Cincinnati, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1226530654

    Chicago Manual of Style (17th edition)

ucin1226530654
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© 2008, all rights reserved.
This open access ETD is published by University of Cincinnati and OhioLINK.