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9270.pdf (3.79 MB)
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Hysteresis in the Conductance of Quantum Point Contacts with In-Plane Side Gates
Author Info
Dutta, Maitreya
Permalink:
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1396530257
Abstract Details
Year and Degree
2014, MS, University of Cincinnati, Engineering and Applied Science: Electrical Engineering.
Abstract
Hysteresis has been observed between the forward and reverse sweeps of a common mode bias applied to the two in-plane side gates of asymmetrically biased GaAs quantum point contacts (QPCs) in the presence of lateral spin orbit coupling. The size of the hysteresis loop was found to be increasing with the amount of bias asymmetry ΔV
g
between the two side gates and dependent on the polarity of ΔV
g
. Some of the experimental results can be explained using a non-equilibrium Green’s function approach to model the conductance through the devices. A detailed numerical study of the onset of intrinsic bistability and accompanying hysteresis in the QPCs was performed. Plots of the conductance versus common gate voltage applied to the two side gates show single or multiple hysteresis loops depending on the QPC dimensions and biasing conditions. The hysteresis only appears for sufficiently long QPCs if the electron-electron interaction is strong enough. The shape of the hysteresis loops depends on the polarity and magnitude of ΔV
g
and the strength of the electron-electron interaction. The hysteresis loops are affected by the presence of dangling bonds on the sidewalls. The rich plethora of hysteresis loops is intimately related to a wide variety of metastable spin textures and linked to the onset of a net spin polarization in the narrow portion of the QPC for biasing conditions leading to conductance anomalies, i.e., less than 2
e
2
/h.
Committee
Marc Cahay, Ph.D. (Committee Chair)
Punit Boolchand, Ph.D. (Committee Member)
Altan Ferendeci, Ph.D. (Committee Member)
Pages
106 p.
Subject Headings
Electrical Engineering
Keywords
Electrical hysteresis
;
lateral spin orbit coupling
;
quantum point contact
;
SpinFET
;
conductance anomaly
;
spintronics
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Citations
Dutta, M. (2014).
Hysteresis in the Conductance of Quantum Point Contacts with In-Plane Side Gates
[Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1396530257
APA Style (7th edition)
Dutta, Maitreya.
Hysteresis in the Conductance of Quantum Point Contacts with In-Plane Side Gates.
2014. University of Cincinnati, Master's thesis.
OhioLINK Electronic Theses and Dissertations Center
, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1396530257.
MLA Style (8th edition)
Dutta, Maitreya. "Hysteresis in the Conductance of Quantum Point Contacts with In-Plane Side Gates." Master's thesis, University of Cincinnati, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1396530257
Chicago Manual of Style (17th edition)
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Document number:
ucin1396530257
Download Count:
478
Copyright Info
© 2014, all rights reserved.
This open access ETD is published by University of Cincinnati and OhioLINK.