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Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM

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2018, MS, University of Cincinnati, Engineering and Applied Science: Electrical Engineering.
The effect of Zr deposition as an interfacial layer between top electrode and oxide layer of HfO2-based Resistive Random-Access Memory (RRAM) was studied in the device stack Ru/HfO2/Zr/W. Using capacitive-based measurement, an estimation of ZrOx/HfO2-x interfacial layer growth was achieved. The result showed that the thicker the Zr layer deposited, the thicker the ZrOx/HfO2-x interfacial layer grew. Electrical characterization showed that an optimal thickness ratio of 0.8:1 of HfO2:Zr was able to produce stability in switching and high endurance. The device with optimal Zr thickness was operated into multiple resistive states and the impedance spectra of the devices’ states was observed. Using these observations, reflection-coefficients were extracted for different resistive states. Clear changes in the reflection coefficient for different resistive states were observed. The device in a low resistive state showed a significantly higher reflection coefficient compared to its high resistive state. An increasing trend in reflection coefficient was observed as the device’s state was gradually reconfigured towards lower resistances. The maximum frequency for reflection increased as the device area decreased. The physics behind this observation is attributed to the interplay of oxygen ions transport between the interfacial layer, conductive filament, and HfO2-film.
Rashmi Jha, Ph.D. (Committee Chair)
Peter Kosel, Ph.D. (Committee Member)
Kevin Leedy, Ph.D. (Committee Member)
60 p.

Recommended Citations

Citations

  • Nguyen, T. H. (2018). Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043

    APA Style (7th edition)

  • Nguyen, Thinh. Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM. 2018. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043.

    MLA Style (8th edition)

  • Nguyen, Thinh. "Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM." Master's thesis, University of Cincinnati, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043

    Chicago Manual of Style (17th edition)