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A Novel Gate Controlled Metal Oxide Resistive Memory Cell and its Applications

Herrmann, Eric
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1540565326482153

Abstract Details

2018, MS, University of Cincinnati, Engineering and Applied Science: Electrical Engineering.
This thesis work expanded on traditional resistive random access memory (ReRAM) technology, which relies on movement of oxygen ions through a metal oxide, with a gate terminal to better control ion motion. This terminal allows for modulation of the ion gradient in the metal-oxide region, controlling the device conductivity. The advantages of such a device over traditional ReRAM lie in the independence of read and write operations, lower power consumption, and higher state range. The practical implications of these advantages over traditional ReRAM are better control over device writing and improved flexibility for certain applications, as well as lower energy consumption and additional available discrete states, allowing for higher density. The advantages of ReRAM in general over traditional non-volatile memory (NVM) technologies such as flash are high endurance, low voltage requirements, and fast write speeds. The gate-controlled device was designed based on commonly accepted conduction mechanisms in metal oxides, which was further developed into a full microfabrication process flow. Photomasks were designed to explore the device characteristics at different physical dimensions. Fabrication was done using RF magnetron sputtering for all depositions, photolithography for patterning, and wet etchants and reactive ion etching (RIE) for etching. The fabricated device was thoroughly characterized for set/reset characteristics, endurance, DC and AC behavior, and parasitics. These device measurements were used to develop a behavioral device model which is based on both experimental results and physics-based mechanisms, and was fit to the experimental data on several devices to obtain a large distribution of device characteristics. Finally, this model was used to explore the usage of such a device as a non-volatile memory cell and in analog artificial neural networks for embedded machine learning. The fabricated device demonstrated the desired behavior, capable of independent reading and writing, continuous configurable conductivity states over 3 orders of magnitude, non-volatile operation, and linear conduction when reading. Even with the high variation in the measured devices, it is shown that a high-density memory structure could be constructed using this device. Furthermore, the simulated analog neural network was able to reach 88% accuracy on sample handwritten digit recognition, demonstrating the potential use of this technology in embedded learning systems.
Rashmi Jha, Ph.D. (Committee Chair)
Marc Cahay, Ph.D. (Committee Member)
Cory Merkel, Ph.D. (Committee Member)
87 p.
Computer Engineering
memristor; neuromorphic; reram; metal oxide; computer memory; thin film

Recommended Citations

Citations

  • Herrmann, E. (2018). A Novel Gate Controlled Metal Oxide Resistive Memory Cell and its Applications [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1540565326482153

    APA Style (7th edition)

  • Herrmann, Eric. A Novel Gate Controlled Metal Oxide Resistive Memory Cell and its Applications. 2018. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1540565326482153.

    MLA Style (8th edition)

  • Herrmann, Eric. "A Novel Gate Controlled Metal Oxide Resistive Memory Cell and its Applications." Master's thesis, University of Cincinnati, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1540565326482153

    Chicago Manual of Style (17th edition)

ucin1540565326482153
183
© 2018, all rights reserved.
This open access ETD is published by University of Cincinnati and OhioLINK.