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Characterization of HfO2-based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices

Olexa, Nicholas
http://rave.ohiolink.edu/etdc/view?acc_num=ucin159216930341664

Abstract Details

2020, MS, University of Cincinnati, Engineering and Applied Science: Electrical Engineering.
The characterization of HfO2 ReRam devices is critical in understanding their switching properties and potential applications. From the known switching properties, an organization of observed phenomena allows for development of a concise framework of device operation. The developed framework acts as a pivot point for understanding and effectively modeling the switching properties in a concise manner. Once this framework is developed, a physical insight into the action of the device can be truly obtained. The method of modeling ReRam devices follows this approach. The physics of device action is understood from the testing data and matched by the framework, allowing for the development of the model. After the model has been fully developed, the testing data trends are shown to match the developed model and are explained to be naturally accommodated by the developed framework. During this process, useful properties of ReRam devices came to light. These properties are shown to have a potential application in hardware security.
Rashmi Jha, Ph.D. (Committee Chair)
Marc Cahay, Ph.D. (Committee Member)
Luke Duncan, PhD (Committee Member)
80 p.
Electrical Engineering
ReRam; HfO2; Secondary Memory; Physics-based Model; filament switching dynamics; Self-limited Reset

Recommended Citations

Citations

  • Olexa, N. (2020). Characterization of HfO2-based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin159216930341664

    APA Style (7th edition)

  • Olexa, Nicholas. Characterization of HfO2-based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices. 2020. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin159216930341664.

    MLA Style (8th edition)

  • Olexa, Nicholas. "Characterization of HfO2-based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices." Master's thesis, University of Cincinnati, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin159216930341664

    Chicago Manual of Style (17th edition)

ucin159216930341664
273
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This open access ETD is published by University of Cincinnati and OhioLINK.