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wright1158515644.pdf (1.59 MB)
ETD Abstract Container
Abstract Header
Electronic Properties of Silicon-based Nanostructures
Author Info
Guzman-Verri, Gian Giacomo
Permalink:
http://rave.ohiolink.edu/etdc/view?acc_num=wright1158515644
Abstract Details
Year and Degree
2006, Master of Science (MS), Wright State University, Physics.
Abstract
We have developed a new unifying tight-binding theory that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp
2
s* and sp
3
models up to first- and second-nearest neighbors, respectively. Our results show that the corresponding Si nanotubes follow the so-called Hamada's rule. Comparison to a recent ab initio calculation is made.
Committee
Lok Lew Yan Voon (Advisor)
Pages
139 p.
Subject Headings
Physics, Condensed Matter
Keywords
Si
;
nanotubes
;
graphene
;
tight-binding
;
sp
2
s*
;
sp
3
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Citations
Guzman-Verri, G. G. (2006).
Electronic Properties of Silicon-based Nanostructures
[Master's thesis, Wright State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=wright1158515644
APA Style (7th edition)
Guzman-Verri, Gian.
Electronic Properties of Silicon-based Nanostructures.
2006. Wright State University, Master's thesis.
OhioLINK Electronic Theses and Dissertations Center
, http://rave.ohiolink.edu/etdc/view?acc_num=wright1158515644.
MLA Style (8th edition)
Guzman-Verri, Gian. "Electronic Properties of Silicon-based Nanostructures." Master's thesis, Wright State University, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=wright1158515644
Chicago Manual of Style (17th edition)
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Document number:
wright1158515644
Download Count:
4,879
Copyright Info
© 2006, all rights reserved.
This open access ETD is published by Wright State University and OhioLINK.