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Electronic Properties of Silicon-based Nanostructures

Guzman-Verri, Gian Giacomo

Abstract Details

2006, Master of Science (MS), Wright State University, Physics.
We have developed a new unifying tight-binding theory that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp2s* and sp3 models up to first- and second-nearest neighbors, respectively. Our results show that the corresponding Si nanotubes follow the so-called Hamada's rule. Comparison to a recent ab initio calculation is made.
Lok Lew Yan Voon (Advisor)
139 p.

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Citations

  • Guzman-Verri, G. G. (2006). Electronic Properties of Silicon-based Nanostructures [Master's thesis, Wright State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=wright1158515644

    APA Style (7th edition)

  • Guzman-Verri, Gian. Electronic Properties of Silicon-based Nanostructures. 2006. Wright State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=wright1158515644.

    MLA Style (8th edition)

  • Guzman-Verri, Gian. "Electronic Properties of Silicon-based Nanostructures." Master's thesis, Wright State University, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=wright1158515644

    Chicago Manual of Style (17th edition)