Skip to Main Content
 

Global Search Box

 
 
 
 

Files

File List


Isukapati with signature.pdf (2.82 MB)

ETD Abstract Container

Abstract Header

Gallium Oxide Thin Films for Optoelectronic Applications

Isukapati, Sundar Babu
http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742

Abstract Details

2018, Master of Science in Engineering, Youngstown State University, Department of Electrical and Computer Engineering.
Gallium oxide (Ga2O3) belongs to the family of transparent conducting oxides (TCOs) which have emerged as attractive semiconductor material due their excellent properties. TCOs offer the combination of high conductivity along with excellent transparency in the visible region and a large direct band gap of 4.9 eV. These open the scope for applications for deep UV optical and high power/high voltage electronic device applications. The objective of this research was to fabricate high quality Ga2O3 thin films by magnetron sputtering which would be used to fabricate optoelectronic devices. The thin films were deposited on double polished c-plane sapphire substrates. Four investigations were conducted in order to optimize the quality of the thin films. First, the effect of using different Ar/O2 mixture for deposition was investigated. Second, the post deposition annealing was investigated where the films were annealed in vacuum and in different gas environments. Third, the effect of different substrate temperature from 20 ℃ to 800 ℃ was investigated. The fourth investigation was where different amounts of tin were introduced in order to perform n-type doping of the films. The structural and elemental compositional properties of the films were determined using x-ray diffraction and energy dispersive spectrometry measurements. ( ¯2 0 1 ) oriented ß-Ga2O3 single crystal thin films were obtained when deposited using 100 % Ar at 500 ℃. The optical characteristics obtained by UV-VIS spectroscopy measurements showed excellent transmission of 90 - 95% and optical bandgaps of 4.7- 5.0 eV. Addition of tin dopants in the films produced a decrease in the optical bandgaps with increasing concentration of tin to the films.
Tom Nelson Oder, PhD (Advisor)
Faramarz Mossayebi, PhD (Committee Member)
Eric MacDonald, PhD (Committee Member)
80 p.
Engineering; Materials Science; Solid State Physics
Gallium Oxide; thin films; magnetron sputtering; single crystal

Recommended Citations

Citations

  • Isukapati, S. B. (2018). Gallium Oxide Thin Films for Optoelectronic Applications [Master's thesis, Youngstown State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742

    APA Style (7th edition)

  • Isukapati, Sundar. Gallium Oxide Thin Films for Optoelectronic Applications. 2018. Youngstown State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742.

    MLA Style (8th edition)

  • Isukapati, Sundar. "Gallium Oxide Thin Films for Optoelectronic Applications." Master's thesis, Youngstown State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742

    Chicago Manual of Style (17th edition)

ysu1527125539086742
2,279
© 2018, all rights reserved.
This open access ETD is published by Youngstown State University and OhioLINK.