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Electrical properties of polycrystalline solar cell silicon

Park, Jihong
http://rave.ohiolink.edu/etdc/view?acc_num=case1061389017

Abstract Details

1994, Doctor of Philosophy, Case Western Reserve University, Materials Science and Engineering.
The electrical properties of polycrystalline silicon (p-type) were investigated by resistivity, C-V, and DLTS measurements. In particular, the influence of oxygen, carbon, and the fast diffusing transition elements (Cu, Ni, Fe, and Cr) in polycrystalline silicon has been studied. Ohmic contacts on polycrystalline silicon specimens were made successfully by Ga-In application by scrubbing or Al evaporation followed by short annealing. For Schottky diodes, Ti/poly-Si (p-type) was used for C-V and DLTS measurements. The objective was to identify the defects which are mainly responsible for the observed electrical changes. The specimens were Cast and Ribbon polycrystalline silicon with different impurity concentrations. Both specimens were annealed over a wide range of temperatures, between 300∼1250°C, to investigate the temperature dependence of the electrical properties, the effect of impurities and the effect of annealing. The electrical changes in polycrystalline silicon as a function of the annealing temperature were observed to depend on the oxygen content. The annealing strongly influenced the oxygen-rich specimens (Ribbon polycrystalline silicon) via the electrical properties of resistivity, carrier concentration, and defect concentration. The maximum values of the resistivitie s and defect concentrations and the minimum values of the carrier concentrations were found between 700∼900°C. The minimum values of the resistivities and trap concentrations and the maximum values of the carrier concentrations were found above The specimens were Cast and Ribbon polycrystalline silicon with different impurity concentrations. Both specimens were annealed over a wide range of temperatures, between 300∼1250°C, to investigate the temperature dependence of the electrical properties, the effect of impurities and the effect of annealing. The electrical changes in polycrystalline silicon as a function of the annealing temperature were observed to depend on the oxygen content. The annealing strongly influenced the oxygen-rich specimens (Ribbon polycrystalline silicon) via the electrical properties of resistivity, carrier concentration, and defect concentration. The maximum values of the resistivities and defect concentrations and the minimum values of the carrier concentrations were found between 700∼900°C. The minimum values of the resistivities and trap concentrations and the maximum values of the carrier concentrations were found above 1100°C. Oxygen-poor specimens (Cast polycrystalline silicon) did not show significant electrical changes after annealing. For an investigation of the influence of particular transition elements, the metals (Cu, Ni, Fe and Cr) were intentionally deposited on polished surfaces of the Cast and Ribbon Si specimens, and the electrical properties of specimens doped with transition elements and of undoped specimens were investigated and compared. The electrical properties of various transition metals in polycrystalline silicon showed different behavior depending on the diffusing temperature and cooling rate. The specimens which were intentionally diffused with Cu or Ni did not show any significant electrical change compared with undoped specimens. However, the specimens which were intentionally diffused with Fe or Cr showed a significant decrease of the carrier concentrations and an increase of the resistivities and trap concentrations compared with undoped specimens. The electrical changes are more prominent with the specimens that were quenched or exposed to a higher diffusion temperature
W. Williams (Advisor)
172 p.
Engineering, Materials Science
Polycrystalline silicon; electrical properties

Recommended Citations

Citations

  • Park, J. (1994). Electrical properties of polycrystalline solar cell silicon [Doctoral dissertation, Case Western Reserve University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=case1061389017

    APA Style (7th edition)

  • Park, Jihong. Electrical properties of polycrystalline solar cell silicon. 1994. Case Western Reserve University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=case1061389017.

    MLA Style (8th edition)

  • Park, Jihong. "Electrical properties of polycrystalline solar cell silicon." Doctoral dissertation, Case Western Reserve University, 1994. http://rave.ohiolink.edu/etdc/view?acc_num=case1061389017

    Chicago Manual of Style (17th edition)

case1061389017
1,019
© 1994, all rights reserved.
This open access ETD is published by Case Western Reserve University School of Graduate Studies and OhioLINK.