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Experimental Study of Barium Strontium Titanate High-k Gate Dielectric on Beta Gallium Oxide Semiconductor

Miesle, Adam
http://rave.ohiolink.edu/etdc/view?acc_num=dayton1682370714251021

Abstract Details

2023, Master of Science (M.S.), University of Dayton, Electrical Engineering.
Development of high permittivity, or high-k dielectrics for ultra-wide bandgap (UWBG) materials, such as B-Ga2O3, is critical to the electric field management in devices made with UWBG semiconductor materials [1]. Typically, high-k dielectrics are deposited using high-temperature processes, such as pulsed laser deposition (PLD), which poses a significant challenge in the development of B-Ga2O3 devices. This thesis is focused on studying the quality of high-k dielectric Ba{x}Sr{1-x}TiO3 (BST) deposited using PLD on ALD-grown SiO2 on Sn-doped (010) B-Ga2O3 substrates. The PLD deposition parameters of thickness, target composition, and deposition temperature were varied to study multiple variations of Ba{x}Sr{1-x}TiO3 MOSCAP devices. BST deposition conditions were identified to produce a device with an effective breakdown field Eeff,BD ≥ 30 MV/cm within the BST/SiO2 dielectric stack with a current leakage ≤ 10^-8 A/cm^2 at Eeff < 5.8-7.6 MV/cm. Interface defect density was analyzed for these devices using the conductance method [2] and photo-assisted capacitance-voltage (C-V) measurements [3]. The devices with the largest Eeff,BD showed a shallow-level defect density Dit ≤ 1012 cm^-2-eV^-1 and deep-level defect density Nit ~ 2x10^12 cm^-2. The extracted shallow and deep-level interface defect densities indicated a high defect density at the dielectric/semiconductor interface, affirming the need for further interface optimization. This work demonstrates successful fabrication of a BST on B-Ga2O3 MOSCAP device, offering supporting motivation for further investigation into the use of high-k BST for B-Ga2O3 devices.
Guru Subramanyam (Advisor)
110 p.
Electrical Engineering; Engineering; Materials Science; Nanotechnology
dielectrics, gallium oxide, MOSCAPs, characterization, BST, Barium Strontium Titanate

Recommended Citations

Citations

  • Miesle, A. (2023). Experimental Study of Barium Strontium Titanate High-k Gate Dielectric on Beta Gallium Oxide Semiconductor [Master's thesis, University of Dayton]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1682370714251021

    APA Style (7th edition)

  • Miesle, Adam. Experimental Study of Barium Strontium Titanate High-k Gate Dielectric on Beta Gallium Oxide Semiconductor. 2023. University of Dayton, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=dayton1682370714251021.

    MLA Style (8th edition)

  • Miesle, Adam. "Experimental Study of Barium Strontium Titanate High-k Gate Dielectric on Beta Gallium Oxide Semiconductor." Master's thesis, University of Dayton, 2023. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1682370714251021

    Chicago Manual of Style (17th edition)

dayton1682370714251021
177
© 2023, all rights reserved.
This open access ETD is published by University of Dayton and OhioLINK.