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RESIDUAL STRESS IN GALLIUM NITRIDE FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

Chen, Ying
http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1171567935

Abstract Details

2000, Master of Science (MS), Ohio University, Chemical Engineering (Engineering).

Residual stress in Gallium Nitride films grown by metalorganic chemical vapor

Daniel Gulino (Advisor)
98 p.
Engineering, Chemical
residual stress; Gallium Nitride films; metalorganic vapor; chemical vapor

Recommended Citations

Citations

  • Chen, Y. (2000). RESIDUAL STRESS IN GALLIUM NITRIDE FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION [Master's thesis, Ohio University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1171567935

    APA Style (7th edition)

  • Chen, Ying. RESIDUAL STRESS IN GALLIUM NITRIDE FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION. 2000. Ohio University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1171567935.

    MLA Style (8th edition)

  • Chen, Ying. "RESIDUAL STRESS IN GALLIUM NITRIDE FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION." Master's thesis, Ohio University, 2000. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1171567935

    Chicago Manual of Style (17th edition)

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This open access ETD is published by Ohio University and OhioLINK.