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Photoluminescence and kinetic of MOCVD grown P-type GaAs:Nd and Nd-implanted semi-insulating GaAs

Saha, Uttam Kumar

Abstract Details

1996, Master of Science (MS), Ohio University, Electrical Engineering & Computer Science (Engineering and Technology).
Rear earth doped III-V semiconductor is important because their emission lines are sharp, and slightly depend on the temperature and the nature of the host materials. In this case internal emission of the 4f transitions is important rather than band to band transition. In this research very sharp intra-4f-shell luminescence spectra of Nd 3+peaking at around 920 nm ( 4F 3/24I 9/2) have been observed from Neodymium implanted semi-insulating gallium arsenide crystal. Experimental results show a number emission lines depending on the annealing time and temperature. Also, theoretical kinetic model for p-type III-V semiconductor doped with RE was developed and solved numerically to fit with the experimental data of metal organic chemical vapor deposition (MOCVD) grown p-type GaAs:Nd. Developed kinetic model shows good agreement with the experimental results.
H. Lozykowski (Advisor)
85 p.

Recommended Citations

Citations

  • Saha, U. K. (1996). Photoluminescence and kinetic of MOCVD grown P-type GaAs:Nd and Nd-implanted semi-insulating GaAs [Master's thesis, Ohio University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1178044230

    APA Style (7th edition)

  • Saha, Uttam. Photoluminescence and kinetic of MOCVD grown P-type GaAs:Nd and Nd-implanted semi-insulating GaAs. 1996. Ohio University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1178044230.

    MLA Style (8th edition)

  • Saha, Uttam. "Photoluminescence and kinetic of MOCVD grown P-type GaAs:Nd and Nd-implanted semi-insulating GaAs." Master's thesis, Ohio University, 1996. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1178044230

    Chicago Manual of Style (17th edition)