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Distributed effects in power transistors and the optimization of the layouts of AlGaN/GaN HFETs

Lee, Sunyoung

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2006, Doctor of Philosophy, Ohio State University, Electrical Engineering.

The distributed effects on the one-finger FET (lateral distributed effects) are analyzed and analytical solutions are obtained. A 4-port network model is reported for the 6-terminal device in the limit of small device width. Negative gate, drain and source feedback impedances are observed in the 4-port network. Two boundary conditions are considered resulting in two distributed 2-port equivalent circuits. For transistors with large periphery, distributed effects along gate and drain rails are analyzed. An analytical solution is presented in the small length approximation, including both distributed effects along the rails and device width. The distributed effects due to the rails become dominant as the finger number is increased.

The parasitic network of an AlGaN/GaN FET is studied using Momentum. A Momentum simulation block for AlGaN/GaN HFETs is defined. To extract the lateral impedances, Momentum simulations are fitted using the 4-port network model. The parasitics caused by the air-bridges are obtained and the effect on the device performance is examined. The scalability of the device is examined.

The Agere Electro-thermal Transistor (AET) model is modified to fit the AlGaN/GaN HFET. The DC-IV model is extracted from measured pulsed-IV for a 2-finger 150μm AlGaN/GaN. The small signal model is extracted to obtain operating frequencies of 11.7GHz and 48.2GHz. A center-fed transistor and an edge-fed transistor are investigated to implement the 11.7GHz and 48.2GHz AlGaN/GaN HFET devices. More signal distributed effects due to the rails appears in the edge-fed devices over the center-fed devices and in the high frequency devices over the low frequency devices. For a 10dB gain, the optimal devices with the maximum peripheries are obtained for each devices and their P1dB's and PAE's are compared.

Several layouts -corporate tree, tapered edge, lateral corporate tree (LC), LC with bypasses (LCB)- are designed to improve the center-fed and edge-fed layouts. The methodology used to design the transistor layouts is presented and the device performances are compared. Corporate tree and LCB layouts provide improved signal distribution along the rails of the center-fed layout thanks to synchronized phase delay over the rails and are consequently found to be the optimal layouts.

Patrick Roblin (Advisor)
166 p.

Recommended Citations

Citations

  • Lee, S. (2006). Distributed effects in power transistors and the optimization of the layouts of AlGaN/GaN HFETs [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1149095133

    APA Style (7th edition)

  • Lee, Sunyoung. Distributed effects in power transistors and the optimization of the layouts of AlGaN/GaN HFETs. 2006. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1149095133.

    MLA Style (8th edition)

  • Lee, Sunyoung. "Distributed effects in power transistors and the optimization of the layouts of AlGaN/GaN HFETs." Doctoral dissertation, Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=osu1149095133

    Chicago Manual of Style (17th edition)