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PhD Dissertation-Jinghui Wang 2014.pdf (4.33 MB)

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Fabrication, Characterization and Simulation of Sandwich Structure GaN Schottky Diode Ionizing Radiation Detectors

Wang, Jinghui
http://rave.ohiolink.edu/etdc/view?acc_num=osu1405497243

Abstract Details

2014, Doctor of Philosophy, Ohio State University, Nuclear Engineering.
The current shortage of Helium-3 proposes a challenge for searching other neutron detection methods to fulfill the increased demand in both industry and academic research applications. Semiconductor radiation detector is one trend of this campaign due to its potential to provide portable, high detection efficiency devices. As a semiconductor material, Gallium Nitride (GaN) was recognized as one of the most promising candidates for radiation detection, especially for operating in harsh environments, mainly due to its superior properties, such as the wide band-gap, large displacement energy, and high thermal stability, etc. In this research, sandwich structure Schottky diodes were fabricated on n-type bulk GaN substrate with thickness of ~ 500 micrometers. The radiation response was achieved by both using 5.4 MeV alpha particles emitted from Am-241 source and a neutron converter 6LiF:ZnS foil (0.3 mm). The results are promising as a high charge collection efficiency was found. The devices were then characterized by current-voltage, capacitance-voltage, and alpha spectroscopy, and the corresponding electrical properties were derived. The major device parameters were obtained including the doping level of these wafers (~ 1016 cm-3), the depletion region depth (several micrometer under several volts), and the Schottky barrier height (0.75 eV). In addition, high temperature current-voltage characteristic and the neutron radiation effect were studied to investigate GaN sensor’s potential application in harsh environment. Furthermore, simulation was performed by Sentaurus TCAD to understand the charge collection process within these detectors. This research provides some insights on future study of using GaN for radiation detection applications.
Lei Cao (Advisor)
Marcello Canova (Committee Member)
Thomas Blue (Committee Member)
William Notz (Committee Chair)
174 p.
Nuclear Engineering
GaN, radiation detector, neutron detection, TCAD, Nanofabrication

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Citations

  • Wang, J. (2014). Fabrication, Characterization and Simulation of Sandwich Structure GaN Schottky Diode Ionizing Radiation Detectors [Doctoral dissertation, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1405497243

    APA Style (7th edition)

  • Wang, Jinghui. Fabrication, Characterization and Simulation of Sandwich Structure GaN Schottky Diode Ionizing Radiation Detectors. 2014. Ohio State University, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1405497243.

    MLA Style (8th edition)

  • Wang, Jinghui. "Fabrication, Characterization and Simulation of Sandwich Structure GaN Schottky Diode Ionizing Radiation Detectors." Doctoral dissertation, Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1405497243

    Chicago Manual of Style (17th edition)

osu1405497243
4,037
© 2014, some rights reserved.Creative Commons License Fabrication, Characterization and Simulation of Sandwich Structure GaN Schottky Diode Ionizing Radiation Detectors by Jinghui Wang is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported License. Based on a work at etd.ohiolink.edu.
This open access ETD is published by The Ohio State University and OhioLINK.