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Capacitance-Based Characterization of PIN Devices

Fink, Douglas Rudolph
http://rave.ohiolink.edu/etdc/view?acc_num=osu1587463438933021

Abstract Details

2020, Master of Science, Ohio State University, Electrical and Computer Engineering.
Capacitance measurements are commonly conducted for many types of semiconductor devices. Because they can detect separated charges, they are able to characterize doping concentration, built-in voltage, speed, and more for p/n junctions. This information provides feedback to the crystal growers and help them grow higher quality materials. However, these measurements do have limitations. The complex circuit model used to calculate capacitance from a measured impedance requires assumptions and simplifications. This thesis reviews analyses and best practices for capacitance measurements and presents two innovations that expand their applications. These new approaches use double-mesa p-i-n devices and the dependence of capacitance upon area to characterize important semiconductor properties. This work is especially relevant to infrared detectors based on narrow gap antimonide semiconductors such as Type-II superlattices. One analysis determines the doping polarity (p-type or n-type) of the intrinsic layer in p-i-n devices, and the other provides a more thorough analysis of the components in the circuit model, reducing the number of error-inducing simplifications. These analyses were applied to GaSb and/or 10 monolayer by 10 monolayer InAs/AlSb superlattice p-i-n and n-i-p devices.
Sanjay Krishna, Dr. (Advisor)
Siddharth Rajan, Dr. (Committee Member)
Daniel Jardine, Dr. (Committee Member)
88 p.
Electrical Engineering
Semiconductors; photodiodes; p-i-n diodes; capacitance-voltage measurements; type-II superlattices; doping; dual junction analysis; molecular beam epitaxy

Recommended Citations

Citations

  • Fink, D. R. (2020). Capacitance-Based Characterization of PIN Devices [Master's thesis, Ohio State University]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=osu1587463438933021

    APA Style (7th edition)

  • Fink, Douglas. Capacitance-Based Characterization of PIN Devices. 2020. Ohio State University, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=osu1587463438933021.

    MLA Style (8th edition)

  • Fink, Douglas. "Capacitance-Based Characterization of PIN Devices." Master's thesis, Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1587463438933021

    Chicago Manual of Style (17th edition)

osu1587463438933021
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This open access ETD is published by The Ohio State University and OhioLINK.