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NiOx Based Resistive Random Access Memories

Chowdhury, Madhumita
http://rave.ohiolink.edu/etdc/view?acc_num=toledo1325535812

Abstract Details

2012, Master of Science in Electrical Engineering, University of Toledo, Electrical Engineering.
In present flash memory devices, data is stored by injecting hot electrons or charge through tunnel oxide. This will result into degradation of oxide and the problem would amplify with the scaling of the dielectric. According to International Technology Roadmap for Semiconductors (ITRS) the continuous scaling of the oxide thickness beyond 16 nm node technology may result into unwanted data loss and high leakage current. Hence, new ways of data storage are being explored, resistive random access memory (RRAM) being one of them. A RRAM device is a two-terminal metal insulator metal (MIM) structure having the potential to scale up to 8 nm generation technology. It is non-volatile and can store data in form of both low resistance state (LRS) and high resistance state (HRS). The other incentives are its low operating voltage, high endurance and integration in crossbar arrays. NiOx promises to be a strong candidate for future non-volatile memory devices and it still needs a better understanding of the physical mechanism behind the ability to switch between two resistive states. This thesis is focused to study the impact of different metal electrode on NiOx based RRAM devices with high percentage (20%) of O2.RRAM device performance with Al and Ru electrodes was studied. Switching characteristics indicated that Al based electrodes lead to the device failure due to formation Al2O3 on NiOx. On the other hand, devices with Ru electrodes demonstrated switching with SET/RESET voltages of less than ±2 V. Moreover, the conduction mechanism responsible for switching mechanism is also reported.
Rashmi Jha, PhD (Committee Chair)
Vijay Devabhaktuni, PhD (Committee Co-Chair)
Mansoor Alam, PhD (Committee Member)
Christopher Melkonian, PhD (Committee Member)
100 p.
Electrical Engineering
Nickel oxide; non-volatile memory; resistive switching; RRAM

Recommended Citations

Citations

  • Chowdhury, M. (2012). NiOx Based Resistive Random Access Memories [Master's thesis, University of Toledo]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1325535812

    APA Style (7th edition)

  • Chowdhury, Madhumita. NiOx Based Resistive Random Access Memories. 2012. University of Toledo, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=toledo1325535812.

    MLA Style (8th edition)

  • Chowdhury, Madhumita. "NiOx Based Resistive Random Access Memories." Master's thesis, University of Toledo, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1325535812

    Chicago Manual of Style (17th edition)

toledo1325535812
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© 2012, all rights reserved.
This open access ETD is published by University of Toledo and OhioLINK.