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PhD_Dissertation_Wenbo_Chen.pdf (4.68 MB)

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Understanding of Oxide Based Resistive Random Access Memory Devices with Multi-level Resistance States and Application

Chen, Wenbo
http://rave.ohiolink.edu/etdc/view?acc_num=toledo1466719077

Abstract Details

, Doctor of Philosophy, University of Toledo, Engineering.
Non-volatile memory (NVM) are broadly used in removable media storage, smart phones, solid-state drive, etc. and flash memory technology has been dominating NVM market for over 20 years. However, further scaling of flash memory beyond sub 20 nm node brings tremendous challenges in device performance. For further scaling of Non-Volatile Memory technology beyond flash memory devices, Resistive Random Access Memory (ReRAM) devices have been proposed as a promising candidate due to its superior device performance and CMOS compatible process flow. This dissertation focuses on three aspects of ReRAM research, multi-level cell (MLC) storage capacity, ReRAM crossbar array integration, and ReRAM practical application. In MLC part, multi-step forming technology was developed to substitute traditional one step forming in which current overshoot was suppressed and four stable resistance states were obtained. A comprehensive electrical characterization was conducted and trade-offs among different states were studied. In the section detailing crossbar integration, switchable diode based ZnO ReRAM device was identified as one of the promising candidates. Ru/ZnO/TiN/W stack demonstrated forming-free, self compliance-current controlled, non-volatile, switchable diode type ReRAM characteristics in crossbar arrays which establishes potential application as high-density non-volatile memory. Finally, a complete voice cognitive system was built utilizing MLC ReRAM crossbar array to demonstrate functionality at the simulation level. With these contributions, this work has established solid guidance for future ReRAM fabrication and characterization as well as hardware system realization.
Rashmi Jha (Committee Chair)
Mansoor Alam (Committee Member)
Christopher Melkonian (Committee Member)
Richard Molyet (Committee Member)
Hong Wang (Committee Member)
Engineering

Recommended Citations

Citations

  • Chen, W. (n.d.). Understanding of Oxide Based Resistive Random Access Memory Devices with Multi-level Resistance States and Application [Doctoral dissertation, University of Toledo]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1466719077

    APA Style (7th edition)

  • Chen, Wenbo. Understanding of Oxide Based Resistive Random Access Memory Devices with Multi-level Resistance States and Application. University of Toledo, Doctoral dissertation. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=toledo1466719077.

    MLA Style (8th edition)

  • Chen, Wenbo. "Understanding of Oxide Based Resistive Random Access Memory Devices with Multi-level Resistance States and Application." Doctoral dissertation, University of Toledo. Accessed JUNE 17, 2025. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1466719077

    Chicago Manual of Style (17th edition)

toledo1466719077
579
© , all rights reserved.
This open access ETD is published by University of Toledo and OhioLINK.
Release 3.2.12