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SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES

BREED, ANIKET AJITKUMAR
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1029256143

Abstract Details

2002, MS, University of Cincinnati, Engineering : Electrical Engineering.
In this study, the effects of displacement of a p-n junction from coincidence with a SiGe/Si heterojunction have been investigated using a simple analytical model. The phenomenon is of interest for understanding the degradation in performance of NPN SiGe/Si heterojunction bipolar transistors where Ge is employed in the base when there is boron outdiffusion that produces p-n junction displacement at one or both of the emitter and the collector-base junctions. This analysis describes the formation of parasitic barriers in the conduction band associated with this p-n junction displacement. The barrier is significantly larger for the heterojunction located on the p-side, but the barrier height is also a function of the Germanium content, doping level and the magnitude of the displacement. Junction bias and high current density flow also modulate the barrier’s height. These barriers degrade the performance of the SiGe HBT in terms of its current gain, cutoff frequency, power gain and maximum frequency of oscillation. The results of the analytical model are compared with those obtained using a commercial numerical device simulator ATLAS from SILVACO International based on a simple, three-region model of a heterojunction with a nearby p-n junction. The implications of p-n junction displacement on the formation of parasitic barriers at the emitter and the collector junctions in SiGe transistors and their dependence on device operation are discussed.
Dr. Kenneth P. Roenker (Advisor)
179 p.
silicon-germanium; heterojunction bipolar transistor; parasitic barrier; SiGe

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Citations

  • BREED, A. A. (2002). SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1029256143

    APA Style (7th edition)

  • BREED, ANIKET. SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES. 2002. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1029256143.

    MLA Style (8th edition)

  • BREED, ANIKET. "SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES." Master's thesis, University of Cincinnati, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1029256143

    Chicago Manual of Style (17th edition)

ucin1029256143
1,176
© 2002, all rights reserved.
This open access ETD is published by University of Cincinnati and OhioLINK.
Release 3.2.12