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SIMULATION OF PENTACENE ORGANIC METAL-OXIDE FIELD EFFECT TRANSISTORS

PRENTICE, DAVID CHARLES
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060200543

Abstract Details

2003, MS, University of Cincinnati, Engineering : Electrical Engineering.
The search for lighter and cheaper electronics has recently begun investigating a new group of materials, organic semiconductors, which have not previously been considered for use in charge manipulation and transport in transistors. Recent progress has even begun to steal the spot light from the current leader in electronics, which is the world of inorganic semiconductors such as silicon and gallium arsenide. This new type of semiconducting material which has drawn increased interest from scientists and engineers is that of organic semiconductors. Historically, organic material has been largely insulating in its nature. But research in recent years has demonstrated the ability to form organic materials whose ability to conduct current can be modified so that semiconducting characteristics can be achieved. In fact, field effect transistors based on charge transport in organic semiconductors have been demonstrated. Recently, organic transistor speeds have become comparable to that of devices based on amorphous silicon. This has peaked interest in the possibility that organic-based transistors could replace amorphous silicon FETs in flat panel displays and other areas of technology. Currently, a wide variety of organic materials are being investigated for use in these transistors. Because of the early stage of the development of these organic transistors, there has been very little work on computer modeling of the devices. This thesis describes the use of a commercial modeling software package, ATLAS from Silvaco International, to simulate the operation of an insulating gate, field effect transistor (MOSFET) based on the organic semiconductor pentacene. Material properties are drawn from a survey of the published literature and results are compared with measurements reported on experimental, prototype devices. The objective is to develop an understanding of the factors limiting device performance in order to improve the device’s design and operation.
Dr. Kenneth P. Roenker (Advisor)
137 p.
organic transistors; simulation; pentacene

Recommended Citations

Citations

  • PRENTICE, D. C. (2003). SIMULATION OF PENTACENE ORGANIC METAL-OXIDE FIELD EFFECT TRANSISTORS [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060200543

    APA Style (7th edition)

  • PRENTICE, DAVID. SIMULATION OF PENTACENE ORGANIC METAL-OXIDE FIELD EFFECT TRANSISTORS. 2003. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060200543.

    MLA Style (8th edition)

  • PRENTICE, DAVID. "SIMULATION OF PENTACENE ORGANIC METAL-OXIDE FIELD EFFECT TRANSISTORS." Master's thesis, University of Cincinnati, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060200543

    Chicago Manual of Style (17th edition)

ucin1060200543
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© 2003, all rights reserved.
This open access ETD is published by University of Cincinnati and OhioLINK.